SLDS272 September 2024 DRV81620-Q1
ADVANCE INFORMATION
MIN | MAX | UNIT | ||
---|---|---|---|---|
VM | Analog supply voltage | -0.3 | 42 | V |
VDD | Digital supply voltage | -0.3 | 5.75 | V |
VM_LD | Supply voltage for load dump protection | 42 | V | |
VM_SC | Supply voltage for short circuit protection | 0 | 35 | V |
-VM_REV | Reverse polarity voltage, TJ(0) = 25 °C, t ≤ 2 min, RL = 70 Ω on all channels | - | 19 | V |
IVM | Current through VM pin, t ≤ 2 min | -10 | 10 | mA |
|IL| | Load current, single channel | - | IL_OCP0 | A |
VDS | Voltage at power FET | -0.3 | 42 | V |
VOUT_S | FET source voltage | -16 | VOUT_D + 0.3 | V |
VOUT_D | FET drain voltage (VOUT_S ≥ 0 V) | VOUT_S - 0.3 | 42 | V |
VOUT_D | FET drain voltage (VOUT_S < 0 V) | -0.3 | 42 | V |
EAS | Maximum energy dissipation single pulse, TJ(0) = 25 °C, IL(0) = 2*IL_EAR | - | 50 | mJ |
EAS | Maximum energy dissipation single pulse, TJ(0) = 150 °C, IL(0) = 400 mA | - | 25 | mJ |
EAR | Maximum energy dissipation for repetitive pulses -IL_EAR, 2*106 cycles, TJ(0) = 85 °C, IL(0) = IL_EAR | - | 10 | mJ |
VI | Voltage at IN0, IN1, nSCS, SCLK, SDI pins | -0.3 | 5.75 | V |
VnSLEEP | Voltage at nSLEEP pin | -0.3 | 42 | V |
VSDO | Voltage at SDO pin | -0.3 | VDD + 0.3 | V |
TA | Ambient Temperature | -40 | 125 | °C |
TJ | Junction Temperature | -40 | 150 | °C |
Tstg | Storage temperature | -55 | 150 | °C |
The short circuit protection feature does not support short inductance < 1 μH above 28 V.
Load dump is for a duration of ton = 400 ms; ton/toff = 10%; limited to 100 pulses.
For reverse polarity, TJ(0) = 25 °C, t ≤ 2 min, RL = 70 Ω on all channels. Device is mounted on a FR4 2s2p board according to JEDEC JESD51-2,-5,-7 at natural convection; the Product (Chip+Package) was simulated on a 76.2 *114.3 *1.5 mm board with 2 inner copper layers (2 * 70 μm Cu, 2 * 35 μm Cu). Where applicable a thermal via array under the exposed pad contacted the first inner copper layer.
For maximum energy dissipation, pulse shape represents inductive switch off: IL(t) = IL(0) x (1 - t / tpulse); 0 < t < tpulse.
Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
Fault conditions are considered as “outside” normal operating range.