SLVSGC3 May   2020 DRV8210P

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 External Components
      2. 8.3.2 Control Modes
        1. 8.3.2.1 PWM Control
      3. 8.3.3 Protection Circuits
        1. 8.3.3.1 Supply Undervoltage Lockout (UVLO)
        2. 8.3.3.2 OUTx Overcurrent Protection (OCP)
        3. 8.3.3.3 Thermal Shutdown (TSD)
      4. 8.3.4 Pin Diagrams
        1. 8.3.4.1 Logic-Level Inputs
    4. 8.4 Device Functional Modes
      1. 8.4.1 Active Mode
      2. 8.4.2 Low-Power Sleep Mode
      3. 8.4.3 Fault Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Full-Bridge Driving
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Supply Voltage
          2. 9.2.1.2.2 Control Interface
          3. 9.2.1.2.3 Low-Power Operation
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Dual-Coil Relay Driving
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
          1. 9.2.2.2.1 Supply Voltage
          2. 9.2.2.2.2 Control Interface
          3. 9.2.2.2.3 Low-Power Operation
        3. 9.2.2.3 Application Curves
      3. 9.2.3 Current Sense
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detailed Design Procedure
          1. 9.2.3.2.1 Shunt Resistor Sizing
    3. 9.3 Current Capability and Thermal Performance
      1. 9.3.1 Power Dissipation and Output Current Capability
      2. 9.3.2 Thermal Performance
        1. 9.3.2.1 Steady-State Thermal Performance
        2. 9.3.2.2 Transient Thermal Performance
  10. 10Power Supply Recommendations
    1. 10.1 Bulk Capacitance
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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11.1 Layout Guidelines

Since the DRV8210P device has integrated power MOSFETs capable of driving high current, careful attention should be paid to the layout design and external component placement. Some design and layout guidelines are provided below. For more information on layout recommendations, please see the application note Best Practices for Board Layout of Motor Drivers.

  • Low ESR ceramic capacitors should be utilized for the VM-to-GND and VCC-to-GND bypass capacitors. X5R and X7R types are recommended.
  • The VM and VCC power supply capacitors should be placed as close to the device as possible to minimize the loop inductance.
  • The VM power supply bulk capacitor can be of ceramic or electrolytic type, but should also be placed as close as possible to the device to minimize the loop inductance.
  • VM, OUT1, OUT2, and GND carry the high current from the power supply to the outputs and back to ground. Thick metal routing should be utilized for these traces as is feasible.
  • GND should connect directly on the PCB ground plane.
  • The device thermal pad should be attached to the PCB top layer ground plane and internal ground plane (when available) through thermal vias to maximize the PCB heat sinking.
  • The copper plane area attached to the thermal pad should be maximized to ensure optimal heat sinking.
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