SLVSGC3 May   2020 DRV8210P

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 External Components
      2. 8.3.2 Control Modes
        1. 8.3.2.1 PWM Control
      3. 8.3.3 Protection Circuits
        1. 8.3.3.1 Supply Undervoltage Lockout (UVLO)
        2. 8.3.3.2 OUTx Overcurrent Protection (OCP)
        3. 8.3.3.3 Thermal Shutdown (TSD)
      4. 8.3.4 Pin Diagrams
        1. 8.3.4.1 Logic-Level Inputs
    4. 8.4 Device Functional Modes
      1. 8.4.1 Active Mode
      2. 8.4.2 Low-Power Sleep Mode
      3. 8.4.3 Fault Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Full-Bridge Driving
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Supply Voltage
          2. 9.2.1.2.2 Control Interface
          3. 9.2.1.2.3 Low-Power Operation
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Dual-Coil Relay Driving
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
          1. 9.2.2.2.1 Supply Voltage
          2. 9.2.2.2.2 Control Interface
          3. 9.2.2.2.3 Low-Power Operation
        3. 9.2.2.3 Application Curves
      3. 9.2.3 Current Sense
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detailed Design Procedure
          1. 9.2.3.2.1 Shunt Resistor Sizing
    3. 9.3 Current Capability and Thermal Performance
      1. 9.3.1 Power Dissipation and Output Current Capability
      2. 9.3.2 Thermal Performance
        1. 9.3.2.1 Steady-State Thermal Performance
        2. 9.3.2.2 Transient Thermal Performance
  10. 10Power Supply Recommendations
    1. 10.1 Bulk Capacitance
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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9.3.1 Power Dissipation and Output Current Capability

Total power dissipation for the device consists of three main components: quiescent supply current dissipation (PVM and PVCC), the power MOSFET switching losses (PSW), and the power MOSFET RDS(on) (conduction) losses (PRDS). While other factors may contribute additional power losses, they are typically insignificant compared to the three main items.

Equation 2. PTOT = PVM + PVCC + PSW + PRDS

PVM can be calculated from the nominal motor supply voltage (VVM) and the IVM active mode current specification. PVCC can be calculated from the nominal logic supply voltage (VVCC) and the IVCC active mode current specification. When VVCC < VVM, the DRV8210 draws active current from the VM pin rather than the VCC pin. During this operating condition, IVCC is typically less than 500 nA.

Equation 3. PVM = VVM x IVM
Equation 4. PVM = 7 mW = 5 V x 1.4 mA
Equation 5. PVCC = VVCC x IVCC
Equation 6. PVCC = 0.594 mW = 3.3 V x 0.18 mA

PSW can be calculated from the nominal motor supply voltage (VVM), average output current (IRMS), switching frequency (fPWM) and the device output rise (tRISE) and fall (tFALL) time specifications.

Equation 7. PSW = PSW_RISE + PSW_FALL
Equation 8. PSW_RISE = 0.5 x VM x IRMS x tRISE x fPWM
Equation 9. PSW_FALL = 0.5 x VM x IRMS x tFALL x fPWM
Equation 10. PSW_RISE = 3.75 mW = 0.5 x 5 V x 0.5 A x 150 ns x 20 kHz
Equation 11. PSW_FALL = 3.75 mW = 0.5 x 5 V x 0.5 A x 150 ns x 20 kHz
Equation 12. PSW = 7.5 mW = 3.75 mW + 3.75 mW

PRDS can be calculated from the device RDS(on) and average output current (IRMS).

Equation 13. PRDS = IRMS2 x (RDS(ON)_HS + RDS(ON)_LS)

RDS(ON) has a strong correlation with the device temperature. Assuming a device junction temperature of 85 °C, RDS(on) could increase ~1.5x based on the normalized temperature data. The calculation below shows this derating factor.

Equation 14. PRDS = 394 mW = (0.5 A)2 x (525 mΩ x 1.5 + 525 mΩ x 1.5)

Based on the example calculations above, the expressions below calculate the total expected power dissipation for the device.

Equation 15. PTOT = PVM + PVCC + PSW + PRDS
Equation 16. PTOT = 409 mW = 7 mW + 0.594 mW + 7.5 mW + 394 mW

The driver's junction temperature can be estimated using PTOT, device ambient temperature (TA), and package thermal resistance (RθJA). The value for RθJA depends heavily on the PCB design and copper heat sinking around the device. Section 9.3.2 describes this dependence in greater detail.

Equation 17. TJ = (PTOT x RθJA) + TA
Equation 18. TJ = 126°C = (0.409 W x 99.6 °C/W) + 85°C

The device junction temperature should remain below its absolute maximum rating for all system operating conditions. The calculations in this section provide reasonable estimates for junction temperature. However, other methods based on temperature measurements taken during system operation are more realistic and reliable. Additional information on motor driver current ratings and power dissipation can be found in Section 9.3.2 and Section 12.1.1.
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