ZHCSMP1 December   2021 DRV8251

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
    7. 7.7 Timing Diagrams
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 External Components
    4. 8.4 Feature Description
      1. 8.4.1 Bridge Control
      2. 8.4.2 Current Regulation
      3. 8.4.3 Protection Circuits
        1. 8.4.3.1 Overcurrent Protection (OCP)
        2. 8.4.3.2 Thermal Shutdown (TSD)
        3. 8.4.3.3 VM Undervoltage Lockout (UVLO)
    5. 8.5 Device Functional Modes
      1. 8.5.1 Active Mode
      2. 8.5.2 Low-Power Sleep Mode
      3. 8.5.3 Fault Mode
    6. 8.6 Pin Diagrams
      1. 8.6.1 Logic-Level Inputs
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Brush DC Motor
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Motor Voltage
          2. 9.2.1.2.2 Motor Current
          3. 9.2.1.2.3 Sense Resistor
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Stall Detection
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
          1. 9.2.2.2.1 Stall Detection Timing
          2. 9.2.2.2.2 Stall Threshold Selection
        3. 9.2.2.3 Application Curves
      3. 9.2.3 Relay Driving
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detailed Design Procedure
          1. 9.2.3.2.1 Control Interface for Single-Coil Relays
          2. 9.2.3.2.2 Control Interface for Dual-Coil Relays
        3. 9.2.3.3 Application Curves
      4. 9.2.4 Multi-Sourcing with Standard Motor Driver Pinout
    3. 9.3 Current Capability and Thermal Performance
      1. 9.3.1 Power Dissipation and Output Current Capability
      2. 9.3.2 Thermal Performance
        1. 9.3.2.1 Steady-State Thermal Performance
        2. 9.3.2.2 Transient Thermal Performance
  10. 10Power Supply Recommendations
    1. 10.1 Bulk Capacitance
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
  13. 13Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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订购信息

11.1 Layout Guidelines

Since the DRV8251 integrates power MOSFETs capable of driving high current, careful attention should be paid to the layout design and external component placement. Some design and layout guidelines are provided below.

  • Low ESR ceramic capacitors should be utilized for the VM to GND bypass capacitor. X5R and X7R types are recommended.
  • The VM power supply capacitors should be placed as close to the device as possible to minimize the loop inductance.
  • The VM power supply bulk capacitor can be of ceramic or electrolytic type, but should also be placed as close as possible to the device to minimize the loop inductance.
  • VM, OUT1, OUT2, and PGND carry the high current from the power supply to the outputs and back to ground. Thick metal routing should be utilized for these traces as is feasible.
  • The device thermal pad should be attached to the PCB top layer ground plane and internal ground plane (when available) through thermal vias to maximize the PCB heat sinking.
  • A recommended land pattern for the thermal vias is provided in the package drawing section.
  • The copper plane area attached to the thermal pad should be maximized to ensure optimal heat sinking.
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