ZHCSPF5 April 2022 DRV8300-Q1
PRODUCTION DATA
The DRV8300-Q1 integrates three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. Input on GVDD provides the gate bias voltage for the low-side MOSFETs. The high voltage is generated using bootstrap capacitor and GVDD supply. The half-bridge gate drivers can be used in combination to drive a three-phase motor or separately to drive other types of loads.