ZHCSI91B November 2017 – July 2018 DRV8304
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If a system at VVM = 8 V (IVCP = 15 mA) uses a maximum PWM switching frequency of 45 kHz, then the charge pump can support MOSFETs using trapezoidal commutation with a Qg < 333 nC, and MOSFETs with sinusoidal commutation Qg < 111 nC. When the VM voltage (VVM) is 8 V, the maximum DRV8304 gate-drive voltage (VGSH) is 7.3 V. Therefore, at 7.3-V gate drive, the target FET (part number CSD18514Q5A) only has a gate charge of approximately 22 nC. Therefore, with this FET, the system can have an adequate margin.