ZHCSE35 August   2015 DRV8305

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SPI Timing Requirements (Slave Mode Only)
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Three-Phase Gate Driver
      2. 7.3.2  Operating Modes
      3. 7.3.3  Charge Pump
      4. 7.3.4  Gate Driver Architecture
      5. 7.3.5  IDRIVE/TDRIVE
      6. 7.3.6  Slew Rate/Slope Control
      7. 7.3.7  Current Shunt Amplifiers
      8. 7.3.8  Internal Regulators (DVDD and AVDD)
      9. 7.3.9  Voltage Regulator Output for Driving External Loads (VREG)
      10. 7.3.10 Protection Features
        1. 7.3.10.1 Fault and Protection Handling
        2. 7.3.10.2 Shoothrough Protection
        3. 7.3.10.3 VDS Sensing - External FET Protection and Reporting (OC Event)
        4. 7.3.10.4 Low-Side Source Monitoring (SNS_OCP)
      11. 7.3.11 Undervoltage Reporting and Undervoltage Lockout (UVLO) Protection
        1. 7.3.11.1 Battery Overvoltage Protection (PVDD_OV)
        2. 7.3.11.2 Charge Pump Overvoltage Protection (VCPH_OV/VCP_LSD_OV)
        3. 7.3.11.3 Overtemperature (OT) Warning and Protection
        4. 7.3.11.4 dV/dt Protection
        5. 7.3.11.5 VGS Protection
        6. 7.3.11.6 Gate Driver Faults
        7. 7.3.11.7 Reverse Battery Protection
        8. 7.3.11.8 MCU Watchdog
      12. 7.3.12 Pin Control Functions
        1. 7.3.12.1 EN_GATE
        2. 7.3.12.2 SPI Pins
      13. 7.3.13 Fault / Warning Classes and Recovery
        1. 7.3.13.1 Reg 09h CLR_FLTS
    4. 7.4 Device Functional Modes
      1. 7.4.1 Power-Up and Operating States Hardware Configuration for VREG/VREF
        1. 7.4.1.1 POWER Up
        2. 7.4.1.2 STANDBY State
        3. 7.4.1.3 OPERATING State
        4. 7.4.1.4 SLEEP State
    5. 7.5 Programming
      1. 7.5.1 SPI Communication
        1. 7.5.1.1 SPI
        2. 7.5.1.2 SPI Format
    6. 7.6 Register Maps
      1. 7.6.1 Read / Write Bit
      2. 7.6.2 Status Registers
      3. 7.6.3 0x1 Warning and Watchdog Reset
      4. 7.6.4 0x2 OV/VDS Faults
      5. 7.6.5 0x3 IC Faults
      6. 7.6.6 0x4 Gate Driver VGS Faults
      7. 7.6.7 Control Registers
        1. 7.6.7.1 HS Gate Driver Control (address = 0x5)
        2. 7.6.7.2 LS Gate Driver Control (address = 0x6)
        3. 7.6.7.3 Gate Drive Control (address = 0x7)
        4. 7.6.7.4 IC Operation (address = 0x9)
        5. 7.6.7.5 Shunt Amplifier Control (address = 0xA)
        6. 7.6.7.6 Voltage Regulator Control (address = 0xB)
        7. 7.6.7.7 VDS Sense Control (address = 0xC)
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Gate Drive Average Current
        2. 8.2.2.2 MOSFET Slew Rates
        3. 8.2.2.3 Overcurrent Protection
        4. 8.2.2.4 Current Sense Amplifiers
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 社区资源
    2. 11.2 商标
    3. 11.3 静电放电警告
    4. 11.4 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

11 器件和文档支持

11.1 社区资源

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

11.2 商标

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

11.3 静电放电警告

esds-image

这些装置包含有限的内置 ESD 保护。 存储或装卸时，应将导线一起截短或将装置放置于导电泡棉中，以防止 MOS 门极遭受静电损伤。

11.4 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.
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