7.3.1 Three Phase Smart Gate Drivers

The DRV8306 device integrates three, half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. A doubler charge pump provides the proper gate bias voltage to the high-side MOSFET across a wide operating voltage range in addition to providing 100% duty-cycle support. An internal linear regulator provides the gate-bias voltage for the low-side MOSFETs.

The DRV8306 device implements a smart gate-drive architecture which lets the user dynamically adjust the gate drive current (through the IDRIVE pin) without requiring external gate current limiting resistors. Additionally, this architecture provides a variety of protection features for the external MOSFETs including automatic dead-time insertion, parasitic dV/dt gate turnon prevention, and gate-fault detection.