ZHCSOY8B September 2021 – February 2022 DRV8311
PRODUCTION DATA
Because the output stages use N-channel FETs, the device requires a gate-drive voltage higher than the VM power supply to enhance the high-side FETs fully. The DRV8311 integrates a charge pump circuit that generates a voltage above the VM supply for this purpose.
The charge pump requires a single external capacitor for operation. See Table 8-1 for details on the capacitor value.
The charge pump shuts down when nSLEEP is low.