ZHCSRR7 February 2023 DRV8316C-Q1
PRODUCTION DATA
The device is fully protected against any cross conduction of MOSFETs - during the switching of high-side and low-side MOSFETs, DRV8316C-Q1 avoids shoot-through events by inserting a dead time (tdead). This is implemented by sensing the gate-source voltage (VGS) of the high-side and low-side MOSFETs and ensuring that VGS of high-side MOSFET has reached below turn-off levels before switching on the low-side MOSFET of same half-bridge (or vice-versa) as shown in Figure 8-18 and Figure 8-19.