ZHCSRR7 February 2023 DRV8316C-Q1
PRODUCTION DATA
Because the output stages use N-channel FETs, the device requires a gate-drive voltage higher than the VM power supply to enhance the high-side FETs fully. The DRV8316C-Q1 integrates a charge-pump circuit that generates a voltage above the VM supply for this purpose.
The charge pump requires two external capacitors for operation. See Figure 8-1, Figure 8-2, Section 6 and Section 8.3 for details on these capacitors (value, connection, and so forth).
The charge pump shuts down when nSLEEP is low.