4 修订历史记录
Changes from B Revision (December 2017) to C Revision
- Changed 更改了应用Go
- Updated input labels for the INLx and INHx signals in the Layout Example imagsGo
- Added 在器件命名规则 部分的图像中添加了 DRV835x 器件选项Go
Changes from A Revision (April 2017) to B Revision
- Changed 在“特性”中将低功耗睡眠模式电源电流从最大值 (20µA) 更改成了典型值 (12µA)Go
- Changed 更改了应用Go
- Changed the GAIN value from 45 kΩ to 47 kΩ in the test condition of the amplifier gain for the H/W device in the Electrical Characteristics tableGo
- Deleted tEN_nSCS from the SPI Slave Mode Timing DiagramGo
- Added a note to the Synchronous 1x PWM Mode to define !PWMGo
- Updated the Auto Offset Calibration sectionGo
- Updated the VDS Latched Shutdown and VDS Automatic Retry sectionsGo
- Updated the Sleep Mode sectionGo
- Changed the address listed in the title for the Gate Drive LS Register section to the correct register address, 0x04Go
- Changed the maximum Qg value for both trapezoidal and sinusoidal commutation the VVM = 8 V example of the Detailed Design ProcedureGo
- Changed IDRIVEP and IDRIVEN equations in the IDRIVE Configuration sectionGo
Changes from * Revision (February 2017) to A Revision
- Changed the test condition for the IBIAS parameter in the Electrical Characteristics tableGo
- Changed the GHx values in the 3x PWM Mode Truth TableGo
- Changed the calibration description and added auto calibration feature description Go