ZHCSG01C February   2017  – August 2018 DRV8320 , DRV8320R , DRV8323 , DRV8323R

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     简化原理图
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions—32-Pin DRV8320 Devices
    2.     Pin Functions—40-Pin DRV8320R Devices
    3.     Pin Functions—40-Pin DRV8323 Devices
    4.     Pin Functions—48-Pin DRV8323R Devices
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 SPI Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Three Phase Smart Gate Drivers
        1. 8.3.1.1 PWM Control Modes
          1. 8.3.1.1.1 6x PWM Mode (PWM_MODE = 00b or MODE Pin Tied to AGND)
          2. 8.3.1.1.2 3x PWM Mode (PWM_MODE = 01b or MODE Pin = 47 kΩ to AGND)
          3. 8.3.1.1.3 1x PWM Mode (PWM_MODE = 10b or MODE Pin = Hi-Z)
          4. 8.3.1.1.4 Independent PWM Mode (PWM_MODE = 11b or MODE Pin Tied to DVDD)
        2. 8.3.1.2 Device Interface Modes
          1. 8.3.1.2.1 Serial Peripheral Interface (SPI)
          2. 8.3.1.2.2 Hardware Interface
        3. 8.3.1.3 Gate Driver Voltage Supplies
        4. 8.3.1.4 Smart Gate Drive Architecture
          1. 8.3.1.4.1 IDRIVE: MOSFET Slew-Rate Control
          2. 8.3.1.4.2 TDRIVE: MOSFET Gate Drive Control
          3. 8.3.1.4.3 Propagation Delay
          4. 8.3.1.4.4 MOSFET VDS Monitors
          5. 8.3.1.4.5 VDRAIN Sense Pin
      2. 8.3.2 DVDD Linear Voltage Regulator
      3. 8.3.3 Pin Diagrams
      4. 8.3.4 Low-Side Current Sense Amplifiers (DRV8323 and DRV8323R Only)
        1. 8.3.4.1 Bidirectional Current Sense Operation
        2. 8.3.4.2 Unidirectional Current Sense Operation (SPI only)
        3. 8.3.4.3 Auto Offset Calibration
        4. 8.3.4.4 MOSFET VDS Sense Mode (SPI Only)
      5. 8.3.5 Step-Down Buck Regulator
        1. 8.3.5.1 Fixed Frequency PWM Control
        2. 8.3.5.2 Bootstrap Voltage (CB)
        3. 8.3.5.3 Output Voltage Setting
        4. 8.3.5.4 Enable nSHDN and VIN Undervoltage Lockout
        5. 8.3.5.5 Current Limit
        6. 8.3.5.6 Overvoltage Transient Protection
        7. 8.3.5.7 Thermal Shutdown
      6. 8.3.6 Gate Driver Protective Circuits
        1. 8.3.6.1 VM Supply Undervoltage Lockout (UVLO)
        2. 8.3.6.2 VCP Charge Pump Undervoltage Lockout (CPUV)
        3. 8.3.6.3 MOSFET VDS Overcurrent Protection (VDS_OCP)
          1. 8.3.6.3.1 VDS Latched Shutdown (OCP_MODE = 00b)
          2. 8.3.6.3.2 VDS Automatic Retry (OCP_MODE = 01b)
          3. 8.3.6.3.3 VDS Report Only (OCP_MODE = 10b)
          4. 8.3.6.3.4 VDS Disabled (OCP_MODE = 11b)
        4. 8.3.6.4 VSENSE Overcurrent Protection (SEN_OCP)
          1. 8.3.6.4.1 VSENSE Latched Shutdown (OCP_MODE = 00b)
          2. 8.3.6.4.2 VSENSE Automatic Retry (OCP_MODE = 01b)
          3. 8.3.6.4.3 VSENSE Report Only (OCP_MODE = 10b)
          4. 8.3.6.4.4 VSENSE Disabled (OCP_MODE = 11b or DIS_SEN = 1b)
        5. 8.3.6.5 Gate Driver Fault (GDF)
        6. 8.3.6.6 Thermal Warning (OTW)
        7. 8.3.6.7 Thermal Shutdown (OTSD)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Gate Driver Functional Modes
        1. 8.4.1.1 Sleep Mode
        2. 8.4.1.2 Operating Mode
        3. 8.4.1.3 Fault Reset (CLR_FLT or ENABLE Reset Pulse)
      2. 8.4.2 Buck Regulator Functional Modes
        1. 8.4.2.1 Continuous Conduction Mode (CCM)
        2. 8.4.2.2 Eco-mode Control Scheme
    5. 8.5 Programming
      1. 8.5.1 SPI Communication
        1. 8.5.1.1 SPI
          1. 8.5.1.1.1 SPI Format
    6. 8.6 Register Maps
      1. Table 1. DRV832xS and DRV832xRS Register Map
      2. 8.6.1    Status Registers
        1. 8.6.1.1 Fault Status Register 1 (address = 0x00)
          1. Table 11. Fault Status Register 1 Field Descriptions
        2. 8.6.1.2 Fault Status Register 2 (address = 0x01)
          1. Table 12. Fault Status Register 2 Field Descriptions
      3. 8.6.2    Control Registers
        1. 8.6.2.1 Driver Control Register (address = 0x02)
          1. Table 14. Driver Control Field Descriptions
        2. 8.6.2.2 Gate Drive HS Register (address = 0x03)
          1. Table 15. Gate Drive HS Field Descriptions
        3. 8.6.2.3 Gate Drive LS Register (address = 0x04)
          1. Table 16. Gate Drive LS Register Field Descriptions
        4. 8.6.2.4 OCP Control Register (address = 0x05)
          1. Table 17. OCP Control Field Descriptions
        5. 8.6.2.5 CSA Control Register (DRV8323x Only) (address = 0x06)
          1. Table 18. CSA Control Field Descriptions
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Primary Application
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 External MOSFET Support
            1. 9.2.1.2.1.1 Example
          2. 9.2.1.2.2 IDRIVE Configuration
            1. 9.2.1.2.2.1 Example
          3. 9.2.1.2.3 VDS Overcurrent Monitor Configuration
            1. 9.2.1.2.3.1 Example
          4. 9.2.1.2.4 Sense Amplifier Bidirectional Configuration (DRV8323 and DRV8323R)
            1. 9.2.1.2.4.1 Example
          5. 9.2.1.2.5 Buck Regulator Configuration (DRV8320R and DRV8323R)
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Alternative Application
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
          1. 9.2.2.2.1 Sense Amplifier Unidirectional Configuration
            1. 9.2.2.2.1.1 Example
  10. 10Power Supply Recommendations
    1. 10.1 Bulk Capacitance Sizing
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Buck-Regulator Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 器件支持
      1. 12.1.1 器件命名规则
    2. 12.2 文档支持
      1. 12.2.1 相关文档
    3. 12.3 相关链接
    4. 12.4 接收文档更新通知
    5. 12.5 社区资源
    6. 12.6 商标
    7. 12.7 静电放电警告
    8. 12.8 术语表
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

11.1 Layout Guidelines

Bypass the VM pin to the PGND pin using a low-ESR ceramic bypass capacitor with a recommended value of 0.1 µF. Place this capacitor as close to the VM pin as possible with a thick trace or ground plane connected to the PGND pin. Additionally, bypass the VM pin using a bulk capacitor rated for VM. This component can be electrolytic. This capacitance must be at least 10 µF.

Additional bulk capacitance is required to bypass the high current path on the external MOSFETs. This bulk capacitance should be placed such that it minimizes the length of any high current paths through the external MOSFETs. The connecting metal traces should be as wide as possible, with numerous vias connecting PCB layers. These practices minimize inductance and let the bulk capacitor deliver high current.

Place a low-ESR ceramic capacitor between the CPL and CPH pins. This capacitor should be 47 nF, rated for VM, and be of type X5R or X7R. Additionally, place a low-ESR ceramic capacitor between the VCP and VM pins. This capacitor should be 1 µF, rated for 16 V, and be of type X5R or X7R.

Bypass the DVDD pin to the AGND pin with a 1-µF low-ESR ceramic capacitor rated for 6.3 V and of type X5R or X7R. Place this capacitor as close to the pin as possible and minimize the path from the capacitor to the AGND pin.

The VDRAIN pin can be shorted directly to the VM pin. However, if a significant distance is between the device and the external MOSFETs, use a dedicated trace to connect to the common point of the drains of the high-side external MOSFETs. Do not connect the SLx pins directly to PGND. Instead, use dedicated traces to connect these pins to the sources of the low-side external MOSFETs. These recommendations offer more accurate VDS sensing of the external MOSFETs for overcurrent detection.

Minimize the loop length for the high-side and low-side gate drivers. The high-side loop is from the GHx pin of the device to the high-side power MOSFET gate, then follows the high-side MOSFET source back to the SHx pin. The low-side loop is from the GLx pin of the device to the low-side power MOSFET gate, then follows the low-side MOSFET source back to the PGND pin.

For additional layout guidelines and examples see the Layout Guide for the DRV832x Family of Three-Phase Smart Gate Drivers application report.
千亿体育app官网登录(中国)官方网站IOS/安卓通用版/手机APP | 米乐app下载官网（中国）|ios|Android/通用版APP最新版 | 米乐|米乐·M6（中国大陆）官方网站 | 千亿体育登陆地址 | 华体会体育（中国）HTH·官方网站 | 千赢qy国际_全站最新版千赢qy国际V6.2.14安卓/IOS下载 | 18新利网v1.2.5|中国官方网站 | bob电竞真人（中国官网）安卓/ios苹果/电脑版【1.97.95版下载】 | 千亿体育app官方下载(中国)官方网站IOS/安卓/手机APP下载安装 |