ZHCSG01C February 2017 – August 2018 DRV8320 , DRV8320R , DRV8323 , DRV8323R
PRODUCTION DATA.
The voltage supply for the high-side gate driver is created using a doubler charge pump that operates from the VM voltage supply input. The charge pump lets the gate driver correctly bias the high-side MOSFET gate with respect to the source across a wide input supply voltage range. The charge pump is regulated to keep a fixed output voltage of VVM + 11 V and supports an average output current of 25 mA. When VVM is less than 12 V, the charge pump operates in full doubler mode and generates VVCP = 2 × VVM – 1.5 V when unloaded. The charge pump is continuously monitored for undervoltage events to prevent under-driven MOSFET conditions. The charge pump requires a X5R or X7R, 1-µF, 16-V ceramic capacitor between the VM and VCP pins to act as the storage capacitor. Additionally, a X5R or X7R, 47-nF, VM-rated ceramic capacitor is required between the CPH and CPL pins to act as the flying capacitor.
The voltage supply of the low-side gate driver is created using a linear regulator that operates from the VM voltage supply input. The linear regulator lets the gate driver correctly bias the low-side MOSFET gate with respect to ground. The linear regulator output is fixed at 11 V and supports an output current of 25 mA.