ZHCSP68C December   2021  – October 2022 DRV8328

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specification
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings Comm
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information 1pkg
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Three BLDC Gate Drivers
        1. 8.3.1.1 PWM Control Modes
          1. 8.3.1.1.1 6x PWM Mode
          2. 8.3.1.1.2 3x PWM Mode
        2. 8.3.1.2 Device Hardware Interface
        3. 8.3.1.3 Gate Drive Architecture
          1. 8.3.1.3.1 Propagation Delay
          2. 8.3.1.3.2 Deadtime and Cross-Conduction Prevention
      2. 8.3.2 AVDD Linear Voltage Regulator
      3. 8.3.3 Pin Diagrams
      4. 8.3.4 Gate Driver Shutdown Sequence (DRVOFF)
      5. 8.3.5 Gate Driver Protective Circuits
        1. 8.3.5.1 PVDD Supply Undervoltage Lockout (PVDD_UV)
        2. 8.3.5.2 AVDD Power on Reset (AVDD_POR)
        3. 8.3.5.3 GVDD Undervoltage Lockout (GVDD_UV)
        4. 8.3.5.4 BST Undervoltage Lockout (BST_UV)
        5. 8.3.5.5 MOSFET VDS Overcurrent Protection (VDS_OCP)
        6. 8.3.5.6 VSENSE Overcurrent Protection (SEN_OCP)
        7. 8.3.5.7 Thermal Shutdown (OTSD)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Gate Driver Functional Modes
        1. 8.4.1.1 Sleep Mode
        2. 8.4.1.2 Operating Mode
        3. 8.4.1.3 Fault Reset (nSLEEP Reset Pulse)
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Three Phase Brushless-DC Motor Control
        1. 9.2.1.1 Detailed Design Procedure
          1. 9.2.1.1.1 Motor Voltage
          2. 9.2.1.1.2 Bootstrap Capacitor and GVDD Capacitor Selection
          3. 9.2.1.1.3 Gate Drive Current
          4. 9.2.1.1.4 Gate Resistor Selection
          5. 9.2.1.1.5 System Considerations in High Power Designs
            1. 9.2.1.1.5.1 Capacitor Voltage Ratings
            2. 9.2.1.1.5.2 External Power Stage Components
            3. 9.2.1.1.5.3 Parallel MOSFET Configuration
          6. 9.2.1.1.6 Dead Time Resistor Selection
          7. 9.2.1.1.7 VDSLVL Selection
          8. 9.2.1.1.8 AVDD Power Losses
          9. 9.2.1.1.9 Power Dissipation and Junction Temperature Losses
      2. 9.2.2 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Bulk Capacitance Sizing
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
      1. 11.3.1 Power Dissipation
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Device Nomenclature
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Related Links
    4. 12.4 Receiving Notification of Documentation Updates
    5. 12.5 Community Resources
    6. 12.6 Trademarks
  13. 13Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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订购信息

Gate Driver Shutdown Sequence (DRVOFF)

When DRVOFF is driven high, the gate driver goes into shutdown, overriding signals on inputs pins INHx and INLx. DRVOFF bypasses the digital control logic inside the device, and is connected directly to the gate driver output (see Figure 8-8). This pin provides a mechanism for externally monitored faults to disable the gate driver by directly bypassing an external controller or the internal control logic. When the DRV8328 detects that the DRVOFF pin is driven high, it disables the gate driver and puts it into pulldown mode (see Figure 8-9). The gate driver shutdown sequence proceeds as shown in Figure 8-9. When the gate driver initiates the shutdown sequence, the active driver pulldown is applied at ISINK current for the tSD_SINK_DIG time, after which the gate driver moves to passive pulldown mode.

Figure 8-8 DRV8328 DRVOFF Gate Driver Output State
Figure 8-9 Gate Driver Shutdown Seqeunce