ZHCSP68C December   2021  – October 2022 DRV8328

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specification
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings Comm
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information 1pkg
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Three BLDC Gate Drivers
        1. 8.3.1.1 PWM Control Modes
          1. 8.3.1.1.1 6x PWM Mode
          2. 8.3.1.1.2 3x PWM Mode
        2. 8.3.1.2 Device Hardware Interface
        3. 8.3.1.3 Gate Drive Architecture
          1. 8.3.1.3.1 Propagation Delay
          2. 8.3.1.3.2 Deadtime and Cross-Conduction Prevention
      2. 8.3.2 AVDD Linear Voltage Regulator
      3. 8.3.3 Pin Diagrams
      4. 8.3.4 Gate Driver Shutdown Sequence (DRVOFF)
      5. 8.3.5 Gate Driver Protective Circuits
        1. 8.3.5.1 PVDD Supply Undervoltage Lockout (PVDD_UV)
        2. 8.3.5.2 AVDD Power on Reset (AVDD_POR)
        3. 8.3.5.3 GVDD Undervoltage Lockout (GVDD_UV)
        4. 8.3.5.4 BST Undervoltage Lockout (BST_UV)
        5. 8.3.5.5 MOSFET VDS Overcurrent Protection (VDS_OCP)
        6. 8.3.5.6 VSENSE Overcurrent Protection (SEN_OCP)
        7. 8.3.5.7 Thermal Shutdown (OTSD)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Gate Driver Functional Modes
        1. 8.4.1.1 Sleep Mode
        2. 8.4.1.2 Operating Mode
        3. 8.4.1.3 Fault Reset (nSLEEP Reset Pulse)
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Three Phase Brushless-DC Motor Control
        1. 9.2.1.1 Detailed Design Procedure
          1. 9.2.1.1.1 Motor Voltage
          2. 9.2.1.1.2 Bootstrap Capacitor and GVDD Capacitor Selection
          3. 9.2.1.1.3 Gate Drive Current
          4. 9.2.1.1.4 Gate Resistor Selection
          5. 9.2.1.1.5 System Considerations in High Power Designs
            1. 9.2.1.1.5.1 Capacitor Voltage Ratings
            2. 9.2.1.1.5.2 External Power Stage Components
            3. 9.2.1.1.5.3 Parallel MOSFET Configuration
          6. 9.2.1.1.6 Dead Time Resistor Selection
          7. 9.2.1.1.7 VDSLVL Selection
          8. 9.2.1.1.8 AVDD Power Losses
          9. 9.2.1.1.9 Power Dissipation and Junction Temperature Losses
      2. 9.2.2 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Bulk Capacitance Sizing
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
      1. 11.3.1 Power Dissipation
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Device Nomenclature
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Related Links
    4. 12.4 Receiving Notification of Documentation Updates
    5. 12.5 Community Resources
    6. 12.6 Trademarks
  13. 13Mechanical, Packaging, and Orderable Information

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8.4.1.3 Fault Reset (nSLEEP Reset Pulse)

In the case of device latched faults, the DRV8328 goes into a partial shutdown state to help protect the external power MOSFETs and system.

When the fault condition clears, the device can be re-enabled by issuing a reset pulse to the nSLEEP pin. The nSLEEP reset pulse (tRST) consists of a high-to-low-to-high transition on the nSLEEP pin. The reset pulse has no effect on any of the regulators, device settings, or other functional blocks as long as the low period of the sequence falls within the tRST time window. If the pulse is longer than the tRST time window, the device will start a complete shutdown sequence.

Note: If the user wants to put the device into sleep state after latched fault event, the inputs INHx and INLx needs to be pulled low prior to driving the nSLEEP pin. If the inputs INHx and INLx are not driven low, then the fault is reset after nSLEEP is driven low for the tRST time and there can be pulses on gate driver outputs GHx and GLx prior to device entering sleep. The duration of pulses on GHx and GLx can be of duration tSLEEP if INHx and INLx are not pulled low.
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