The DRV8329 family of devices integrates three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. A charge pump is used to generate the GVDD to supply the correct gate bias voltage across a wide operating voltage range. The low side gate outputs are driven directly from GVDD, while the high side gate outputs are driven using a bootstrap circuit with an integrated diode. An internal trickle charge pump provides support for 100% duty cycle operation. The half-bridge gate drivers can be used in combination to drive a three-phase motor or separately to drive other types of loads.