ZHCSQQ0A
June 2022 – October 2022
DRV8329
PRODUCTION DATA
1
特性
2
应用
3
说明
4
Revision History
5
Device Comparison Table
6
Pin Configuration and Functions
7
Specification
7.1
Absolute Maximum Ratings
7.2
ESD Ratings Comm
7.3
Recommended Operating Conditions
7.4
Thermal Information 1pkg
7.5
Electrical Characteristics
7.6
Typical Characteristics
8
Detailed Description
8.1
Overview
8.2
Functional Block Diagram
8.3
Feature Description
8.3.1
Three BLDC Gate Drivers
8.3.1.1
PWM Control Modes
8.3.1.1.1
6x PWM Mode
8.3.1.1.2
3x PWM Mode
8.3.1.2
Device Hardware Interface
8.3.1.3
Gate Drive Architecture
8.3.1.3.1
Propagation Delay
8.3.1.3.2
Deadtime and Cross-Conduction Prevention
8.3.2
AVDD Linear Voltage Regulator
8.3.3
Pin Diagrams
8.3.4
Low-Side Current Sense Amplifiers
8.3.4.1
Current Sense Operation
8.3.5
Gate Driver Shutdown Sequence (DRVOFF)
8.3.6
Gate Driver Protective Circuits
8.3.6.1
PVDD Supply Undervoltage Lockout (PVDD_UV)
8.3.6.2
AVDD Power on Reset (AVDD_POR)
8.3.6.3
GVDD Undervoltage Lockout (GVDD_UV)
8.3.6.4
BST Undervoltage Lockout (BST_UV)
8.3.6.5
MOSFET VDS Overcurrent Protection (VDS_OCP)
8.3.6.6
VSENSE Overcurrent Protection (SEN_OCP)
8.3.6.7
Thermal Shutdown (OTSD)
8.4
Device Functional Modes
8.4.1
Gate Driver Functional Modes
8.4.1.1
Sleep Mode
8.4.1.2
Operating Mode
8.4.1.3
Fault Reset (nSLEEP Reset Pulse)
9
Application and Implementation
9.1
Application Information
9.2
Typical Application
9.2.1
Three Phase Brushless-DC Motor Control
9.2.1.1
Detailed Design Procedure
9.2.1.1.1
Motor Voltage
9.2.1.1.2
Bootstrap Capacitor and GVDD Capacitor Selection
9.2.1.1.3
Gate Drive Current
9.2.1.1.4
Gate Resistor Selection
9.2.1.1.5
System Considerations in High Power Designs
9.2.1.1.5.1
Capacitor Voltage Ratings
9.2.1.1.5.2
External Power Stage Components
9.2.1.1.5.3
Parallel MOSFET Configuration
9.2.1.1.6
Dead Time Resistor Selection
9.2.1.1.7
VDSLVL Selection
9.2.1.1.8
AVDD Power Losses
9.2.1.1.9
Current Sensing and Output Filtering
9.2.1.1.10
Power Dissipation and Junction Temperature Losses
9.2.2
Application Curves
10
Power Supply Recommendations
10.1
Bulk Capacitance Sizing
11
Layout
11.1
Layout Guidelines
11.2
Layout Example
11.3
Thermal Considerations
11.3.1
Power Dissipation
12
Device and Documentation Support
12.1
Device Support
12.1.1
Device Nomenclature
12.2
Documentation Support
12.2.1
Related Documentation
12.3
Related Links
12.4
Receiving Notification of Documentation Updates
12.5
Community Resources
12.6
Trademarks
13
Mechanical, Packaging, and Orderable Information
13.1
Tape and Reel Information
封装选项
机械数据 (封装 | 引脚)
REE|36
MPQF647
散热焊盘机械数据 (封装 | 引脚)
订购信息
zhcsqq0a_oa
1
特性
65V 三相半桥栅极驱动器
可驱动 3 个高侧和 3 个低侧 N 沟道 MOSFET (NMOS)
4.5V 至 60V 工作电压范围
具有涓流电荷泵,支持 100% 占空比
基于自举的栅极驱动器架构
1000 mA 最大峰值拉电流
2000mA 最大峰值灌电流
具有低输入失调电压的集成电流检测放大器(针对 1 个分流器进行了优化)
可调增益(5、10、20、40 V/V)
硬件接口提供简单配置
温度为 25 ̊C 时,超低功耗休眠模式下的电流 <1uA
4 ns(典型值)相位间传播延迟匹配
独立驱动器关断路径 (DRVOFF)
65V 耐压唤醒引脚 (nSLEEP)
SHx 引脚瞬态负压可达 -10V
6x 和 3x PWM 模式
支持 3.3V 和 5V 逻辑输入
精密 LDO (AVDD),3.3V ±3%,80mA
紧凑型 QFN 封装和尺寸
可通过 VDSLVL 引脚调节 VDS 过流阈值
可通过 DT 引脚调节死区时间
具有
电源块
的高效系统设计
集成保护特性
PVDD 欠压闭锁 (PVDDUV)
GVDD 欠压 (GVDDUV)
自举欠压 (BST_UV)
过流保护(VDS_OCP、SEN_OCP)
热关断 (OTSD)
故障状态指示器 (nFAULT)
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