ZHCSUL8 December   2023 DRV8334

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
    1. 5.1 Pin Functions 48-Pin DRV8334
  7. 6 Specification
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings DRV8334
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information DRV8334
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 SPI Timing Diagrams
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Three BLDC Gate Drivers
        1. 7.3.1.1 PWM Control Modes
          1. 7.3.1.1.1 6x PWM Mode
          2. 7.3.1.1.2 3x PWM Mode with INLx enable control
          3. 7.3.1.1.3 3x PWM Mode with SPI enable control
          4. 7.3.1.1.4 1x PWM Mode
          5. 7.3.1.1.5 SPI Gate Drive Mode
        2. 7.3.1.2 Gate Drive Architecture
          1. 7.3.1.2.1 Bootstrap diode
          2. 7.3.1.2.2 GVDD Charge pump
          3. 7.3.1.2.3 VCP Trickle Charge pump
          4. 7.3.1.2.4 Gate Driver Output
          5. 7.3.1.2.5 Passive and Semi-active pull-down resistor
          6. 7.3.1.2.6 TDRIVE Gate Drive Timing Control
          7. 7.3.1.2.7 Propagation Delay
          8. 7.3.1.2.8 Deadtime and Cross-Conduction Prevention
      2. 7.3.2 Low-Side Current Sense Amplifiers
        1. 7.3.2.1 Unidirectional Current Sense Operation
        2. 7.3.2.2 Bidirectional Current Sense Operation
      3. 7.3.3 Gate Driver Shutdown
        1. 7.3.3.1 DRVOFF Gate Driver Shutdown
        2. 7.3.3.2 Gate Driver Shutdown Timing Sequence
      4. 7.3.4 Gate Driver Protective Circuits
        1. 7.3.4.1  PVDD Supply Undervoltage Lockout (PVDD_UV)
        2. 7.3.4.2  GVDD Undervoltage Lockout (GVDD_UV)
        3. 7.3.4.3  BST Undervoltage Lockout (BST_UV)
        4. 7.3.4.4  MOSFET VDS Overcurrent Protection (VDS_OCP)
        5. 7.3.4.5  VSENSE Overcurrent Protection (SEN_OCP)
        6. 7.3.4.6  Phase Comparators
        7. 7.3.4.7  Thermal Shutdown (OTSD)
        8. 7.3.4.8  Thermal Warning (OTW)
        9. 7.3.4.9  OTP CRC
        10. 7.3.4.10 SPI Watchdog Timer
    4. 7.4 Device Functional Modes
      1. 7.4.1 Gate Driver Functional Modes
        1. 7.4.1.1 Sleep Mode
        2. 7.4.1.2 Operating Mode
      2. 7.4.2 Device Power Up Sequence
    5. 7.5 Programming
      1. 7.5.1 SPI
      2. 7.5.2 SPI Format
      3. 7.5.3 SPI Format Diagrams
    6. 7.6 Register Maps
      1. 7.6.1 STATUS Registers
      2. 7.6.2 CONTROL Registers
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Typical Application with 48-pin package
        1. 8.2.1.1 External Components
      2. 8.2.2 Application Curves
  10. 9 Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Community Resources
    4. 10.4 Trademarks
  12. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Package Option Addendum
    2. 11.2 Tape and Reel Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.6 Timing Requirements

MIN NOM MAX UNIT
tSCLK SCLK minimum period
 100 ns
tSCLKH SCLK minimum high time 50 ns
tSCLKL SCLK minimum low time 50 ns
tSU_SDI SDI input data setup time 15 ns
tH_SDI SDI input data hold time 25 ns
tD_SDO SDO output data delay time; SCLK high to SDO valid (DC VOH x 70% for rise, x30% for fall), CL = 20pF; PVDD ≥ 4.5V;  5 38 ns
tD_SDO SDO output data delay time; SCLK high to SDO valid (DC VOH x 70% for rise, x30% for fall ), CL = 20pF; 4.5V ≥ PVDD  4V 5 48 ns
tSU_nSCS nSCS input setup time 25 ns
tH_nSCS nSCS input hold time 25 ns
tHI_nSCS nSCS minimum high time before active low 450 ns
tEN_SDO SDO enable delay time; nSCS low to SDO ready 50 ns
tDIS_SDO SDO disable delay time; nSCS high to SDO high impedance 50 ns
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