ZHCSUL8 December   2023 DRV8334

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
    1. 5.1 Pin Functions 48-Pin DRV8334
  7. 6 Specification
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings DRV8334
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information DRV8334
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 SPI Timing Diagrams
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Three BLDC Gate Drivers
        1. 7.3.1.1 PWM Control Modes
          1. 7.3.1.1.1 6x PWM Mode
          2. 7.3.1.1.2 3x PWM Mode with INLx enable control
          3. 7.3.1.1.3 3x PWM Mode with SPI enable control
          4. 7.3.1.1.4 1x PWM Mode
          5. 7.3.1.1.5 SPI Gate Drive Mode
        2. 7.3.1.2 Gate Drive Architecture
          1. 7.3.1.2.1 Bootstrap diode
          2. 7.3.1.2.2 GVDD Charge pump
          3. 7.3.1.2.3 VCP Trickle Charge pump
          4. 7.3.1.2.4 Gate Driver Output
          5. 7.3.1.2.5 Passive and Semi-active pull-down resistor
          6. 7.3.1.2.6 TDRIVE Gate Drive Timing Control
          7. 7.3.1.2.7 Propagation Delay
          8. 7.3.1.2.8 Deadtime and Cross-Conduction Prevention
      2. 7.3.2 Low-Side Current Sense Amplifiers
        1. 7.3.2.1 Unidirectional Current Sense Operation
        2. 7.3.2.2 Bidirectional Current Sense Operation
      3. 7.3.3 Gate Driver Shutdown
        1. 7.3.3.1 DRVOFF Gate Driver Shutdown
        2. 7.3.3.2 Gate Driver Shutdown Timing Sequence
      4. 7.3.4 Gate Driver Protective Circuits
        1. 7.3.4.1  PVDD Supply Undervoltage Lockout (PVDD_UV)
        2. 7.3.4.2  GVDD Undervoltage Lockout (GVDD_UV)
        3. 7.3.4.3  BST Undervoltage Lockout (BST_UV)
        4. 7.3.4.4  MOSFET VDS Overcurrent Protection (VDS_OCP)
        5. 7.3.4.5  VSENSE Overcurrent Protection (SEN_OCP)
        6. 7.3.4.6  Phase Comparators
        7. 7.3.4.7  Thermal Shutdown (OTSD)
        8. 7.3.4.8  Thermal Warning (OTW)
        9. 7.3.4.9  OTP CRC
        10. 7.3.4.10 SPI Watchdog Timer
    4. 7.4 Device Functional Modes
      1. 7.4.1 Gate Driver Functional Modes
        1. 7.4.1.1 Sleep Mode
        2. 7.4.1.2 Operating Mode
      2. 7.4.2 Device Power Up Sequence
    5. 7.5 Programming
      1. 7.5.1 SPI
      2. 7.5.2 SPI Format
      3. 7.5.3 SPI Format Diagrams
    6. 7.6 Register Maps
      1. 7.6.1 STATUS Registers
      2. 7.6.2 CONTROL Registers
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Typical Application with 48-pin package
        1. 8.2.1.1 External Components
      2. 8.2.2 Application Curves
  10. 9 Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Community Resources
    4. 10.4 Trademarks
  12. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Package Option Addendum
    2. 11.2 Tape and Reel Information

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机械数据 (封装 | 引脚)
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订购信息

6.3 Recommended Operating Conditions

over operating temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VVM Power supply voltage PVDD
Full device functionality. Operation at PVDD = 4.5V only when coming from higher PVDD. Minimum PVDD for startup = 4.85V		 4.5 36 V
VVM Power supply voltage for logic operation PVDD, Logic and SPI functional after battery falling from min PVDD for startup (during battery cranking after coming from full device functionality) 4.0 60 V
VVDRAIN High-side MOSFET Drain voltage VDRAIN, Full functionality 4.5 60 V
VVDRAIN High-side MOSFET Drain voltage VDRAIN, Limited functionality (VDS monitor).  GVDD, TCP/VCP, BST and Gate drivers are functional. 0 60 V
VBST Bootstrap pin voltage with respect to SHx nSLEEP = High, PWM switching, Gate Driver functional (1) 3.9 20 V
IVCP VCP external load VCP, PVDD < 8V 3 mA
IVCP VCP external load VCP, PVDD > 8V 5 mA
VIN Logic input voltage DRVOFF, INHx, INLx 0 5.5 V
VIN Logic input voltage nSLEEP, 0 60 V
VIN Logic input voltage SCLK, SDI, nSCS 0 5.5 V
VOD Open drain pullup voltage nFAULT 5.5 V
IOD Open drain output pull-up resistor  nFAULT 5 KΩ
IOD Open drain output current SDO, PHC, DC condition -1 mA
IGS Total average gate-drive current (Low Side and High Side Combined) IGHx. IGLx 50 mA
VVREF Current sense amplifier reference voltage VREF 3 5.5 V
VSL DC voltage of SLx SLx pin, DC condition -2 2 V
VCM_CSA Current sense input common mode voltage SP, SN –2 2 V
TA Operating ambient temperature –40 125 °C
TJ Operating junction temperature –40 150 °C
(1) VBST needs to be reviewed by users with over / under voltage detection threshold VBST_OV/VBST_UV as well as the requirements of external MOSFET . 
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