ZHCSR67 July 2020 DRV8353M
PRODUCTION DATA
- 1 特性
- 2 应用
- 3 说明
- 4 Revision History
- 5 Device Comparison Table
- 6 Pin Configuration and Functions
- 7 Absolute Maximum Ratings
- 8 ESD Ratings
- 9 Recommended Operating Conditions
- 10Thermal Information
- 11Electrical Characteristics
- 12SPI Timing Requirements
-
13Detailed Description
- 13.1 Overview
- 13.2 Functional Block Diagram
- 13.3
Feature Description
- 13.3.1 Three Phase Smart Gate Drivers
- 13.3.2 DVDD Linear Voltage Regulator
- 13.3.3 Pin Diagrams
- 13.3.4 Low-Side Current-Shunt Amplifiers
- 13.3.5
Gate Driver Protective Circuits
- 13.3.5.1 VM Supply and VDRAIN Undervoltage Lockout (UVLO)
- 13.3.5.2 VCP Charge-Pump and VGLS Regulator Undervoltage Lockout (GDUV)
- 13.3.5.3 MOSFET VDS Overcurrent Protection (VDS_OCP)
- 13.3.5.4 VSENSE Overcurrent Protection (SEN_OCP)
- 13.3.5.5 Gate Driver Fault (GDF)
- 13.3.5.6 Overcurrent Soft Shutdown (OCP Soft)
- 13.3.5.7 Thermal Warning (OTW)
- 13.3.5.8 Thermal Shutdown (OTSD)
- 13.3.5.9 Fault Response Table
- 13.4 Device Functional Modes
- 13.5 Programming
- 13.6
Register Maps
- 13.6.1 Status Registers
- 13.6.2
Control Registers
- 13.6.2.1 Driver Control Register (address = 0x02h)
- 13.6.2.2 Gate Drive HS Register (address = 0x03h)
- 13.6.2.3 Gate Drive LS Register (address = 0x04h)
- 13.6.2.4 OCP Control Register (address = 0x05h)
- 13.6.2.5 CSA Control Register (address = 0x06h)
- 13.6.2.6 Driver Configuration Register (address = 0x07h)
-
14Application and Implementation
- 14.1 Application Information
- 14.2
Typical Application
- 14.2.1
Primary Application
- 14.2.1.1 Design Requirements
- 14.2.1.2 Detailed Design Procedure
- 14.2.1.3 Application Curves
- 14.2.1
Primary Application
- 15Power Supply Recommendations
- 16Layout
- 17Device and Documentation Support
- 18Mechanical, Packaging, and Orderable Information
14.2.1.2.2 IDRIVE Configuration
The gate drive current strength, IDRIVE, is selected based on the gate-to-drain charge of the external MOSFETs and the target rise and fall times at the outputs. If IDRIVE is selected to be too low for a given MOSFET, then the MOSFET may not turn on completely within the tDRIVE time and a gate drive fault may be asserted. Additionally, slow rise and fall times will lead to higher switching power losses. TI recommends adjusting these values in system with the required external MOSFETs and motor to determine the best possible setting for any application.
The IDRIVEP and IDRIVEN current for both the low-side and high-side MOSFETs are independently adjustable on SPI devices through the SPI registers. On hardware interface devices, both source and sink settings are selected at the same time on the IDRIVE pin.
For MOSFETs with a known gate-to-drain charge Qgd, desired rise time (tr), and a desired fall time (tf), use Equation 7 and Equation 8 to calculate the value of IDRIVEP and IDRIVEN (respectively).
