ZHCSR67 July 2020 DRV8353M
PRODUCTION DATA
- 1 特性
- 2 应用
- 3 说明
- 4 Revision History
- 5 Device Comparison Table
- 6 Pin Configuration and Functions
- 7 Absolute Maximum Ratings
- 8 ESD Ratings
- 9 Recommended Operating Conditions
- 10Thermal Information
- 11Electrical Characteristics
- 12SPI Timing Requirements
-
13Detailed Description
- 13.1 Overview
- 13.2 Functional Block Diagram
- 13.3
Feature Description
- 13.3.1 Three Phase Smart Gate Drivers
- 13.3.2 DVDD Linear Voltage Regulator
- 13.3.3 Pin Diagrams
- 13.3.4 Low-Side Current-Shunt Amplifiers
- 13.3.5
Gate Driver Protective Circuits
- 13.3.5.1 VM Supply and VDRAIN Undervoltage Lockout (UVLO)
- 13.3.5.2 VCP Charge-Pump and VGLS Regulator Undervoltage Lockout (GDUV)
- 13.3.5.3 MOSFET VDS Overcurrent Protection (VDS_OCP)
- 13.3.5.4 VSENSE Overcurrent Protection (SEN_OCP)
- 13.3.5.5 Gate Driver Fault (GDF)
- 13.3.5.6 Overcurrent Soft Shutdown (OCP Soft)
- 13.3.5.7 Thermal Warning (OTW)
- 13.3.5.8 Thermal Shutdown (OTSD)
- 13.3.5.9 Fault Response Table
- 13.4 Device Functional Modes
- 13.5 Programming
- 13.6
Register Maps
- 13.6.1 Status Registers
- 13.6.2
Control Registers
- 13.6.2.1 Driver Control Register (address = 0x02h)
- 13.6.2.2 Gate Drive HS Register (address = 0x03h)
- 13.6.2.3 Gate Drive LS Register (address = 0x04h)
- 13.6.2.4 OCP Control Register (address = 0x05h)
- 13.6.2.5 CSA Control Register (address = 0x06h)
- 13.6.2.6 Driver Configuration Register (address = 0x07h)
-
14Application and Implementation
- 14.1 Application Information
- 14.2
Typical Application
- 14.2.1
Primary Application
- 14.2.1.1 Design Requirements
- 14.2.1.2 Detailed Design Procedure
- 14.2.1.3 Application Curves
- 14.2.1
Primary Application
- 15Power Supply Recommendations
- 16Layout
- 17Device and Documentation Support
- 18Mechanical, Packaging, and Orderable Information
13.3.1.4 Smart Gate Drive Architecture
The DRV8353M gate drivers use an adjustable, complimentary, push-pull topology for both the high-side and low-side drivers. This topology allows for both a strong pullup and pulldown of the external MOSFET gates.
Additionally, the gate drivers use a smart gate-drive architecture to provide additional control of the external power MOSFETs, take additional steps to protect the MOSFETs, and allow for optimal tradeoffs between efficiency and robustness. This architecture is implemented through two components called IDRIVE and TDRIVE which are detailed in the Section 13.3.1.4.1 section and Section 13.3.1.4.2 section. Figure 13-13 shows the high-level functional block diagram of the gate driver.
The IDRIVE gate-drive current and TDRIVE gate-drive time should be initially selected based on the parameters of the external power MOSFET used in the system and the desired rise and fall times (see the Section 14 section).
The high-side gate driver also implements a Zener clamp diode to help protect the external MOSFET gate from overvoltage conditions in the case of external short-circuit events on the MOSFET.
Figure 13-13 Gate Driver Block Diagram