ZHCSR67 July 2020 DRV8353M
PRODUCTION DATA
- 1 特性
- 2 应用
- 3 说明
- 4 Revision History
- 5 Device Comparison Table
- 6 Pin Configuration and Functions
- 7 Absolute Maximum Ratings
- 8 ESD Ratings
- 9 Recommended Operating Conditions
- 10Thermal Information
- 11Electrical Characteristics
- 12SPI Timing Requirements
-
13Detailed Description
- 13.1 Overview
- 13.2 Functional Block Diagram
- 13.3
Feature Description
- 13.3.1 Three Phase Smart Gate Drivers
- 13.3.2 DVDD Linear Voltage Regulator
- 13.3.3 Pin Diagrams
- 13.3.4 Low-Side Current-Shunt Amplifiers
- 13.3.5
Gate Driver Protective Circuits
- 13.3.5.1 VM Supply and VDRAIN Undervoltage Lockout (UVLO)
- 13.3.5.2 VCP Charge-Pump and VGLS Regulator Undervoltage Lockout (GDUV)
- 13.3.5.3 MOSFET VDS Overcurrent Protection (VDS_OCP)
- 13.3.5.4 VSENSE Overcurrent Protection (SEN_OCP)
- 13.3.5.5 Gate Driver Fault (GDF)
- 13.3.5.6 Overcurrent Soft Shutdown (OCP Soft)
- 13.3.5.7 Thermal Warning (OTW)
- 13.3.5.8 Thermal Shutdown (OTSD)
- 13.3.5.9 Fault Response Table
- 13.4 Device Functional Modes
- 13.5 Programming
- 13.6
Register Maps
- 13.6.1 Status Registers
- 13.6.2
Control Registers
- 13.6.2.1 Driver Control Register (address = 0x02h)
- 13.6.2.2 Gate Drive HS Register (address = 0x03h)
- 13.6.2.3 Gate Drive LS Register (address = 0x04h)
- 13.6.2.4 OCP Control Register (address = 0x05h)
- 13.6.2.5 CSA Control Register (address = 0x06h)
- 13.6.2.6 Driver Configuration Register (address = 0x07h)
-
14Application and Implementation
- 14.1 Application Information
- 14.2
Typical Application
- 14.2.1
Primary Application
- 14.2.1.1 Design Requirements
- 14.2.1.2 Detailed Design Procedure
- 14.2.1.3 Application Curves
- 14.2.1
Primary Application
- 15Power Supply Recommendations
- 16Layout
- 17Device and Documentation Support
- 18Mechanical, Packaging, and Orderable Information
14.2.1.2.2.1 IDRIVE Example
Use Equation 9 and Equation 10 to calculate the value of IDRIVEP1 and IDRIVEP2 (respectively) for a gate to drain charge of 13 nC and a rise time from 100 to 300 ns.
Equation 9. 
Equation 10. 
Select a value for IDRIVEP that is between 43 mA and 130 mA. For this example, the value of IDRIVEP was selected as 100-mA source.
Use Equation 11 and Equation 12 to calculate the value of IDRIVEN1 and IDRIVEN2 (respectively) for a gate to drain charge of 13 nC and a fall time from 50 to 150 ns.
Equation 11. 
Equation 12. 
Select a value for IDRIVEN that is between 87 mA and 260 mA. For this example, the value of IDRIVEN was selected as 200-mA sink.