ZHCSG57B March 2017 – December 2018 DRV8702D-Q1 , DRV8703D-Q1
PRODUCTION DATA.
The rise and fall times of the half-bridge output (SH pin) can be adjusted by setting the IDRIVE resistor value or forcing a voltage onto the IDRIVE pin. The FET gate voltage ramps faster if a higher IDRIVE setting is selected. The ramp of the FET gate directly affects the rise and fall times of the half-bridge output.
Tying the IDRIVE pin to ground selects the lowest drive setting of 10-mA source and 20-mA sink. Leaving this pin open selects the drive setting of 155-mA high side and 130-mA low side for source current, and 265-mA high side, 260-mA low side for sink current, at a VM voltage of 13.5 V. For a detailed list of IDRIVE configurations, see Table 6.
IDRIVE RESISTANCE | IDRIVE
VOLTAGE |
SOURCE CURRENT | SINK CURRENT | CIRCUIT | ||
---|---|---|---|---|---|---|
VVM = 5.5 V | VVM = 13.5 V | VVM = 5.5 V | VVM = 13.5 V | |||
< 1 kΩ to GND | GND | High-side: 10 mA
Low-side: 10 mA |
High-side: 10 mA
Low-side: 10 mA |
High-side: 20 mA
Low-side: 20 mA |
High-side: 20 mA
Low-side: 20 mA |
|
33 kΩ ± 5% to GND | 0.7 V ± 5% | High-side: 20 mA
Low-side: 20 mA |
High-side: 20 mA
Low-side: 20 mA |
High-side: 40 mA
Low-side: 40 mA |
High-side: 40 mA
Low-side: 40 mA |
|
200 kΩ ± 5% to GND | 2 V ± 5% | High-side: 50 mA
Low-side: 40 mA |
High-side: 50 mA
Low-side: 45 mA |
High-side: 90 mA
Low-side: 85 mA |
High-side: 95 mA
Low-side: 95 mA |
|
> 2 MΩ to GND, Hi-Z | 3 V ± 5% | High-side: 145 mA
Low-side: 115 mA |
High-side: 155 mA
Low-side: 130 mA |
High-side: 250 mA
Low-side: 235 mA |
High-side: 265 mA
Low-side: 260 mA |
|
68 kΩ ± 5% to AVDD | 4 V ± 5% | High-side: 190 mA
Low-side: 145 mA |
High-side: 210 mA
Low-side: 180 mA |
High-side: 330 mA
Low-side: 300 mA |
High-side: 350 mA
Low-side: 350 mA |
|
< 1 kΩ to AVDD | AVDD | High-side: 240 mA
Low-side: 190 mA |
High-side: 260 mA
Low-side: 225 mA |
High-side: 420 mA
Low-side: 360 mA |
High-side: 440 mA
Low-side:430 mA |