ZHCSG57B March   2017  – December 2018 DRV8702D-Q1 , DRV8703D-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化原理图
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SPI Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Bridge Control
        1. 7.3.1.1 Logic Tables
      2. 7.3.2  MODE Pin
      3. 7.3.3  nFAULT Pin
      4. 7.3.4  Current Regulation
      5. 7.3.5  Amplifier Output (SO)
        1. 7.3.5.1 SO Sample and Hold Operation
      6. 7.3.6  PWM Motor Gate Drivers
        1. 7.3.6.1 Miller Charge (QGD)
      7. 7.3.7  IDRIVE Pin (DRV8702D-Q1 Only)
      8. 7.3.8  Dead Time
      9. 7.3.9  Propagation Delay
      10. 7.3.10 Overcurrent VDS Monitor
      11. 7.3.11 VDS Pin (DRV8702D-Q1 Only)
      12. 7.3.12 Charge Pump
      13. 7.3.13 Gate Drive Clamp
      14. 7.3.14 Protection Circuits
        1. 7.3.14.1 VM Undervoltage Lockout (UVLO2)
        2. 7.3.14.2 Logic Undervoltage (UVLO1)
        3. 7.3.14.3 VCP Undervoltage Lockout (CPUV)
        4. 7.3.14.4 Overcurrent Protection (OCP)
        5. 7.3.14.5 Gate Driver Fault (GDF)
        6. 7.3.14.6 Thermal Shutdown (TSD)
        7. 7.3.14.7 Watchdog Fault (WDFLT, DRV8703D-Q1 Only)
        8. 7.3.14.8 Reverse Supply Protection
      15. 7.3.15 Hardware Interface
        1. 7.3.15.1 IDRIVE (6-level input)
        2. 7.3.15.2 VDS (6-Level Input)
    4. 7.4 Device Functional Modes
    5. 7.5 Programming
      1. 7.5.1 SPI Communication
        1. 7.5.1.1 Serial Peripheral Interface (SPI)
        2. 7.5.1.2 SPI Format
    6. 7.6 Register Maps
      1. 7.6.1 DRV8703D-Q1 Memory Map
      2. 7.6.2 Status Registers
        1. 7.6.2.1 FAULT Status Register (address = 0x00h)
          1. Table 15. FAULT Status Field Descriptions
        2. 7.6.2.2 VDS and GDF Status Register Name (address = 0x01h)
          1. Table 16. VDS and GDF Status Field Descriptions
      3. 7.6.3 Control Registers
        1. 7.6.3.1 Main Control Register Name (address = 0x02h)
          1. Table 18. Main Control Field Descriptions
        2. 7.6.3.2 IDRIVE and WD Control Register Name (address = 0x03h)
          1. Table 19. IDRIVE and WD Field Descriptions
        3. 7.6.3.3 VDS Control Register Name (address = 0x04h)
          1. Table 21. VDS Control Field Descriptions
        4. 7.6.3.4 Config Control Register Name (address = 0x05h)
          1. Table 22. Config Control Field Descriptions
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 External FET Selection
        2. 8.2.2.2 IDRIVE Configuration
        3. 8.2.2.3 VDS Configuration
        4. 8.2.2.4 Current Chopping Configuration
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance Sizing
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档
    2. 11.2 相关链接
    3. 11.3 接收文档更新通知
    4. 11.4 社区资源
    5. 11.5 商标
    6. 11.6 静电放电警告
    7. 11.7 术语表
  12. 12机械、封装和可订购信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • RHB|32
散热焊盘机械数据 (封装 | 引脚)
订购信息

8.2.2.2 IDRIVE Configuration

The IDRIVE current is selected based on the gate charge of the FETs. The IDRIVE pin must be configured so that the FET gates are charged entirely during the t(DRIVE) time. If the selected IDRIVE current is too low for a given FET, then the FET may not turn on completely. TI recommends adjusting these values in-system with the required external FETs and motor to determine the best possible setting for any application.

For FETs with a known gate-to-drain charge (Qgd) and desired rise time (tr), the IDRIVE current can be selected based on the Equation 6.

Equation 6. DRV8702D-Q1 DRV8703D-Q1 eq_06_slvsdr9.gif

If the gate-to-drain charge is 2.3 nC and the desired rise time is around 100 to 300 ns, use Equation 7 to calculate the minimum IDRIVE (IDRIVE1) and Equation 8 to calculate the maximum IDRIVE (IDRIVE2).

Equation 7. IDRIVE1 = 8.4 nC / 100 ns = 84 mA
Equation 8. IDRIVE2 = 8.4 nC / 300 ns = 28 mA

Select a value for IDRIVE between 28 and 84 mA. An IDRIVE value of approximately 50 mA for the source (approximately 100 mA sink) was selected for this application. This value requires a 200-kΩ resistor from the IDRIVE pin to ground.
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