ZHCSEB6 October   2015 DRV8704

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SPI Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  PWM Motor Drivers
      2. 7.3.2  Direct PWM Input Mode (Dual Brushed DC Gate Driver)
      3. 7.3.3  Current Regulation
      4. 7.3.4  Decay Modes
      5. 7.3.5  Blanking Time
      6. 7.3.6  Gate Drivers
      7. 7.3.7  Configuring Gate Drivers
      8. 7.3.8  External FET Selection
      9. 7.3.9  Protection Circuits
        1. 7.3.9.1 Overcurrent Protection (OCP)
        2. 7.3.9.2 Gate Driver Fault (PDF)
        3. 7.3.9.3 Thermal Shutdown (TSD)
        4. 7.3.9.4 Undervoltage Lockout (UVLO)
      10. 7.3.10 Serial Data Format
    4. 7.4 Device Functional Modes
    5. 7.5 Register Maps
      1. 7.5.1 Control Registers
        1. 7.5.1.1 CTRL Register (Address = 0x00h)
        2. 7.5.1.2 TORQUE Register (Address = 0x01h)
        3. 7.5.1.3 OFF Register (Address = 0x02h)
        4. 7.5.1.4 BLANK Register (Address = 0x03h)
        5. 7.5.1.5 DECAY Register (Address = 0x04h)
        6. 7.5.1.6 Reserved Register Address = 0x05h
        7. 7.5.1.7 DRIVE Register Address = 0x06h
        8. 7.5.1.8 STATUS Register (Address = 0x07h)
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 External FET Selection
        2. 8.2.2.2 IDRIVE Configuration
        3. 8.2.2.3 Current Chopping Configuration
        4. 8.2.2.4 Decay Modes
        5. 8.2.2.5 Sense Resistor
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 社区资源
    2. 11.2 商标
    3. 11.3 静电放电警告
    4. 11.4 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range referenced with respect to GND (unless otherwise noted) (1)
MIN MAX UNIT
Power supply voltage (VM) –0.6 60 V
Charge pump voltage (CP1, CP2, VCP) –0.6 VM + 12 V
5-V regulator voltage (V5) –0.6 5.5 V
Internal regulator voltage (VINT) –0.6 2.0 V
Digital pin voltage (SLEEPn, RESET, AIN1, AIN2, BIN1, BIN2, SCS, SCLK, SDATI, SDATO, FAULTn) –0.6 5.5 V
High-side gate drive pin voltage (A1HS, A2HS, B1HS, B2HS) –0.6 VM + 12 V
Low-side gate drive pin voltage (A1LS, A2LS, B1LS, B2LS) –0.6 12 V
Phase node pin voltage (AOUT1, AOUT2, BOUT1, BOUT2) –0.6 VM V
ISENSEx pin voltage (AISENP, AISENN, BISENP, BISENN) –0.7 +0.7 V
Operating virtual junction temperature, TJ –40 150 °C
Storage temperature, Tstg –60 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±4000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) ±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN MAX UNIT
VM Motor power supply voltage range 8 52 V
VIN Digital pin voltage range 0 5.3 V
fPWM Applied PWM signal (xINx) 0 500 kHz
IV5 V5 external load current 0 10 mA
TA Operating ambient temperature range –40 85 °C

6.4 Thermal Information

THERMAL METRIC (1) DRV8704 UNIT
DCP (HTSSOP)
38 PINS
RθJA Junction-to-ambient thermal resistance 32.7 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 17.2 °C/W
RθJB Junction-to-board thermal resistance 14.3 °C/W
ψJT Junction-to-top characterization parameter 0.5 °C/W
ψJB Junction-to-board characterization parameter 14.1 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 0.9 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

TA = 25°C, over recommended operating conditions unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLIES (VM)
IVM VM operating supply current VM = 24 V 17 22 mA
IVMQ VM sleep mode supply current VM = 24 V, SLEEPn low 65 98 μA
INTERNAL LINEAR REGULATORS (V5, VINT)
V5 V5 output voltage VM ≥ 12 V, IOUT ≤ 10 mA 4.8 5 5.2 V
VINT VINT voltage No external load; reference only 1.7 1.8 1.9 V
LOGIC-LEVEL INPUTS (SLEEPn, AIN1, AIN2, BIN1, BIN2, RESET, SCLK, SDATI, SCS)
VIL Input logic low voltage 0.8 V
VIH Input logic high voltage 1.5 V
VHYS Input logic hysteresis 300 mV
IIL Input logic low current VIN = 0 V –5 5 μA
IIH Input logic high current VIN = 5 V 24 50 70 μA
OPEN DRAIN OUTPUTS (nFAULT, SDATO)
VOL Output logic low voltage IO = 5 mA 0.5 V
IOH Output logic high leakage 10kΩ pullup to 3.3 V –1 1 μA
GATE DRIVERS
VOUTH High-side gate drive output voltage VM = 24 V, IO = 100 μA VM + 10 V
VOUTL Low-side gate drive output voltage VM = 24 V, IO = 100 μA 10 V
tDEAD Output dead time digital delay (dead time is enforced in analog circuits) DTIME = 00 410 ns
DTIME = 01 460
DTIME = 10 670
DTIME = 11 880
IOUT,SRC Peak output sourcing gate drive current IDRIVEP = 00 50 mA
IDRIVEP = 01 100
IDRIVEP = 10 150
IDRIVEP = 11 200
IOUT,SNK Peak output sinking gate drive current IDRIVEN = 00 100 mA
IDRIVEN = 01 150
IDRIVEN = 10 200
IDRIVEN = 11 400
tDRIVE,SRC Peak current drive time for sourcing TDRIVEP = 00 263 ns
TDRIVEP = 01 525
TDRIVEP = 10 1050
TDRIVEP = 11 2100
tDRIVE,SNK Peak current drive time for sinking TDRIVEN = 00 263 ns
TDRIVEN = 01 525
TDRIVEN = 10 1050
TDRIVEN = 11 2100
CURRENT REGULATION
tOFF PWM off time adjustment range Set by TOFF register 0.53 134 μs
tBLANK Current sense blanking time Set by TBLANK register 1.05 7.0 μs
AV Current sense amplifier gain ISGAIN = 00 5 V/V
ISGAIN = 01 10
ISGAIN = 10 20
ISGAIN = 11 40
tSET Settling time (to ±1%) ISGAIN = 00, ∆VIN = 400 mV 150 ns
ISGAIN = 01, ∆VIN = 200 mV 300
ISGAIN = 10, ∆VIN = 100 mV 600
ISGAIN = 11, ∆VIN = 50 mV 1200
VOFS Offset voltage ISGAIN = 00, input shorted 4 mV
VIN Input differential voltage range –600 600 mV
VREF Internal reference voltage 2.50 2.75 3.00 V
PROTECTION CIRCUITS
VUVLO Undervoltage lockout VIN falling; UVLO report 6.3 V
VIN rising; UVLO recovery 7.1 8
VOCP Overcurrent protection trip level (Voltage drop across external FET) OCPTH = 00 160 250 320 mV
OCPTH = 01 380 500 580
OCPTH = 10 620 750 880
OCPTH = 11 840 1000 1200
TTSD (1) Thermal shutdown temperature Die temperature, TJ 150 160 180 °C
THYS (1) Thermal shutdown hysteresis Die temperature, TJ 20 °C
(1) Not tested in production; limits are based on characterization data

6.6 SPI Timing Requirements

over operating free-air temperature range (unless otherwise noted)
NO. MIN MAX UNIT
1 tCYC Clock cycle time 250 ns
2 tCLKH Clock high time 25 ns
3 tCLCL Clock low time 25 ns
4 tSU(SDATI) Setup time, SDATI to SCLK 5 ns
5 tH(SDATI) Hold time, SDATI to SCLK 1 ns
6 tSU(SCS) Setup time, SCS to SCLK 5 ns
7 tH(SCS) Hold time, SCS to SCLK 1 ns
8 tL(SCS) Inactive time, SCS (between writes) 100 ns
9 tD(SDATO) Delay time, SCLK to SDATO (during read) 10 ns
tSLEEP Wake time (SLEEPn inactive to high-side gate drive enabled) 1 ms
tRESET Delay from power-up or RESETn high until serial interface functional 10 μs
DRV8704 tim_lvsd29.gif Figure 1. Timing Diagram

6.7 Typical Characteristics

DRV8704 D001_SLVSD29.gif
Figure 2. Supply Current over Supply Voltage
DRV8704 D003_SLVSD29.gif
Figure 4. Sleep Current over Supply Voltage
DRV8704 D005_SLVSD29.gif
Figure 6. V5 Regulator Voltage over Output Load at
VM = 12 V
DRV8704 D002_SLVSD29.gif
Figure 3. Supply Current over Ambient Temperature at VM = 24 V
DRV8704 D004_SLVSD29.gif
Figure 5. Sleep Current over Ambient Temperature at VM = 24 V
DRV8704 D006_SLVSD29.gif
Figure 7. Charge Pump Voltage over DC Current Load at
VM = 12 V
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