ZHCSN08D August   2020  – April 2024 DRV8714-Q1 , DRV8718-Q1

PRODMIX  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
    1. 5.1 VQFN (RVJ) 56-Pin Package and Pin Functions
    2. 5.2 VQFN (RHA) 40-Pin Package and Pin Functions
    3. 5.3 HTQFP (PHP) 48-Pin Package and Pin Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Timing Diagrams
    8. 6.8 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 External Components
      2. 7.3.2 Device Interface Variants
        1. 7.3.2.1 Serial Peripheral Interface (SPI)
        2. 7.3.2.2 Hardware (H/W)
      3. 7.3.3 Input PWM Control Modes
        1. 7.3.3.1 Half-Bridge Control Scheme With Input PWM Mapping
          1. 7.3.3.1.1 DRV8718-Q1 Half-Bridge Control
          2. 7.3.3.1.2 DRV8714-Q1 Half-Bridge Control
        2. 7.3.3.2 H-Bridge Control
          1. 7.3.3.2.1 DRV8714-Q1 H-Bridge Control
        3. 7.3.3.3 Split HS and LS Solenoid Control
          1. 7.3.3.3.1 DRV8714-Q1 Split HS and LS Solenoid Control
      4. 7.3.4 Smart Gate Driver
        1. 7.3.4.1 Functional Block Diagram
        2. 7.3.4.2 Slew Rate Control (IDRIVE)
        3. 7.3.4.3 Gate Drive State Machine (TDRIVE)
        4. 7.3.4.4 Propagation Delay Reduction (PDR)
          1. 7.3.4.4.1 PDR Pre-Charge/Pre-Discharge Control Loop Operation Details
            1. 7.3.4.4.1.1 PDR Pre-Charge/Pre-Discharge Setup
          2. 7.3.4.4.2 PDR Post-Charge/Post-Discharge Control Loop Operation Details
            1. 7.3.4.4.2.1 PDR Post-Charge/Post-Discharge Setup
          3. 7.3.4.4.3 Detecting Drive and Freewheel MOSFET
        5. 7.3.4.5 Automatic Duty Cycle Compensation (DCC)
        6. 7.3.4.6 Closed Loop Slew Time Control (STC)
          1. 7.3.4.6.1 STC Control Loop Setup
      5. 7.3.5 Tripler (Dual-Stage) Charge Pump
      6. 7.3.6 Wide Common-Mode Current Shunt Amplifiers
      7. 7.3.7 Pin Diagrams
        1. 7.3.7.1 Logic Level Input Pin (INx/ENx, INx/PHx, nSLEEP, nSCS, SCLK, SDI)
        2. 7.3.7.2 Logic Level Push Pull Output (SDO)
        3. 7.3.7.3 Logic Level Multi-Function Pin (DRVOFF/nFLT)
        4. 7.3.7.4 Quad-Level Input (GAIN, MODE)
        5. 7.3.7.5 Six-Level Input (IDRIVE, VDS)
      8. 7.3.8 Protection and Diagnostics
        1. 7.3.8.1  Gate Driver Disable (DRVOFF/nFLT and EN_DRV)
        2. 7.3.8.2  Low IQ Powered Off Braking (POB, BRAKE)
        3. 7.3.8.3  Fault Reset (CLR_FLT)
        4. 7.3.8.4  DVDD Logic Supply Power on Reset (DVDD_POR)
        5. 7.3.8.5  PVDD Supply Undervoltage Monitor (PVDD_UV)
        6. 7.3.8.6  PVDD Supply Overvoltage Monitor (PVDD_OV)
        7. 7.3.8.7  VCP Charge Pump Undervoltage Lockout (VCP_UV)
        8. 7.3.8.8  MOSFET VDS Overcurrent Protection (VDS_OCP)
        9. 7.3.8.9  Gate Driver Fault (VGS_GDF)
        10. 7.3.8.10 Thermal Warning (OTW)
        11. 7.3.8.11 Thermal Shutdown (OTSD)
        12. 7.3.8.12 Offline Short Circuit and Open Load Detection (OOL and OSC)
        13. 7.3.8.13 Watchdog Timer
        14. 7.3.8.14 Fault Detection and Response Summary Table
    4. 7.4 Device Functional Modes
      1. 7.4.1 Inactive or Sleep State
      2. 7.4.2 Standby State
      3. 7.4.3 Operating State
    5. 7.5 Programming
      1. 7.5.1 SPI Interface
      2. 7.5.2 SPI Format
      3. 7.5.3 SPI Interface for Multiple Slaves
        1. 7.5.3.1 SPI Interface for Multiple Slaves in Daisy Chain
  9. 8 Register Maps
    1. 8.1 DRV8718-Q1 Register Map
    2. 8.2 DRV8714-Q1 Register Map
    3. 8.3 DRV8718-Q1 Register Descriptions
      1. 8.3.1 DRV8718-Q1_STATUS Registers
      2. 8.3.2 DRV8718-Q1_CONTROL Registers
      3. 8.3.3 DRV8718-Q1_CONTROL_ADV Registers
      4. 8.3.4 DRV8718-Q1_STATUS_ADV Registers
    4. 8.4 DRV8714-Q1 Register Descriptions
      1. 8.4.1 DRV8714-Q1_STATUS Registers
      2. 8.4.2 DRV8714-Q1_CONTROL Registers
      3. 8.4.3 DRV8714-Q1_CONTROL_ADV Registers
      4. 8.4.4 DRV8714-Q1_STATUS_ADV Registers
  10. 9  Application Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Gate Driver Configuration
          1. 9.2.2.1.1 VCP Load Calculation Example
          2. 9.2.2.1.2 IDRIVE Calculation Example
          3. 9.2.2.1.3 tDRIVE Calculation Example
          4. 9.2.2.1.4 Maximum PWM Switching Frequency
        2. 9.2.2.2 Current Shunt Amplifier Configuration
        3. 9.2.2.3 Power Dissipation
      3. 9.2.3 Application Curves
    3. 9.3 Initialization
    4. 9.4 Power Supply Recommendations
      1. 9.4.1 Bulk Capacitance Sizing
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  11. 10Device Documentation and Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documents
    2. 10.2 接收文档更新通知
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 静电放电警告
    6. 10.6 术语表
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Package Option Addendum

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息
9.2.2.1.2 IDRIVE Calculation Example

The gate drive current strength, IDRIVE, is selected based on the gate-to-drain charge of the external MOSFETs and the target rise and fall times at the switch-node. If IDRIVE is selected to be too low for a given MOSFET, then the MOSFET may not turn on or off completely within the configured tDRIVE time and a gate fault may be asserted. Additionally, slow rise and fall times will lead to higher switching power losses in the external power MOSFETs. It is recommended to verify these values in system with the required external MOSFETs and load to determine the optimal settings.

The IDRIVEP and IDRIVEN for both the high-side and low-side external MOSFETs are adjustable on SPI device variants. On hardware interface device variants, both source and sink settings are selected simultaneously on the IDRIVE pin.

For MOSFETs with a known gate-to-drain charge (QGD), desired rise time (trise), and a desired fall time (tfall), use Equation 3 and Equation 4 to calculate the approximate values of IDRIVEP and IDRIVEN (respectively).

Equation 3. IDRIVEP = QGD / trise
Equation 4. IDRIVEN = QGD / tfall

Using the input design parameters as an example, we can calculate the approximate values for IDRIVEP and IDRIVEN.

Equation 5. IDRIVEP_HI = 5 nC / 750 ns = 6.67 mA
Equation 6. IDRIVEP_LO = 5 nC / 1000 ns = 5 mA

Based on these calculations a value of 6 mA was chosen for IDRIVEP.

Equation 7. IDRIVEN_HI = 5 nC / 250 ns = 20 mA
Equation 8. IDRIVEN_LO = 5 nC / 500 ns = 10 mA

Based on these calculations, a value of 16 mA was chosen for IDRIVEN.
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