ZHCSQ96 July 2021 DRV8770
PRODUCTION DATA
请参考 PDF 数据表获取器件具体的封装图。
The DRV8770 integrates two half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. Input on GVDD provides the gate bias voltage for the low-side MOSFETs. The high voltage is generated using a bootstrap capacitor and GVDD supply. DRV8770 device integrates the bootstrap diode. The half-bridge gate drivers can be used in combination to drive a brushed DC motor or separately to drive other types of loads.