ZHCSQ96 July 2021 DRV8770
PRODUCTION DATA
请参考 PDF 数据表获取器件具体的封装图。
DRV8770 device integrates bootstrap diode used along with boot capacitor to generate voltage to drive high side N-channel MOSFET. The high-side and low-side gate drivers and can drive 750-mA source, 1.5-A sink currents with total 30-mA average output current. DRV8770 is available in 0.5-mm pitch QFN and 0.65 TSSOP surface-mount packages. The QFN size is 4 × 4 mm (0.5-mm pin pitch) for the 24-pin package, and TSSOP size is 6.5 × 6.4 mm (0.65-mm pin pitch) for the 20-pin package.