ZHCSQ96 July   2021 DRV8770

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings Comm
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Gate Drivers
        1. 7.3.1.1 Gate Drive Timings
          1. 7.3.1.1.1 Propagation Delay
          2. 7.3.1.1.2 Deadtime and Cross-Conduction Prevention
        2. 7.3.1.2 Mode (Inverting and non-inverting INLx)
      2. 7.3.2 Pin Diagrams
      3. 7.3.3 Gate Driver Protective Circuits
        1. 7.3.3.1 VBSTx Undervoltage Lockout (BSTUV)
        2. 7.3.3.2 GVDD Undervoltage Lockout (GVDDUV)
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance Sizing
  10. 10Layout
    1. 10.1 Layout Example
    2. 10.2 Layout Guidelines
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 支持资源
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 术语表
  12. 12Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
  • RGE|24
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.5 Electrical Characteristics

4.8 V ≤ VGVDD ≤ 20 V, –40°C ≤ TJ ≤ 150°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLIES (GVDD, BSTx)
IGVDD GVDD standby mode current  INHx = INLX = 0; VBSTx = VGVDD 400 800 1400 µA
GVDD active mode current  INHx = INLX = Switching @20kHz; VBSTx = VGVDD; NO FETs connected 400 825 1400 µA
ILBSx Bootstrap pin leakage current VBSTx = VSHx = 85V; VGVDD = 0V 2 4 7 µA
ILBS_TRAN Bootstrap pin active mode transient leakage current  INHx = Switching@20kHz 30 105 220 µA
ILBS_DC Bootstrap pin active mode leakage static current  INHx = High 30 85 150 µA
ILSHx High-side source pin leakage current  INHx = INLX = 0; VBSTx - VSHx = 12V; VSHx = 0 to 85V 30 55 80 µA
LOGIC-LEVEL INPUTS (INHx, INLx, MODE)
VIL_MODE Input logic low voltage Mode pin 0.6 V
VIL Input logic low voltage INLx, INHx pins 0.8 V
VIH_MODE Input logic high voltage Mode pin 3.7 V
VIH Input logic high voltage INLx, INHx pins 2.0 V
VHYS_MODE Input hysteresis Mode pin 1600 2000 2400 mV
VHYS Input hysteresis INLx, INHx pins 40 100 260 mV
IIL_INLx INLx Input logic low current VPIN (Pin Voltage) = 0 V; INLx in non-inverting mode -1 0 1 µA
VPIN (Pin Voltage) = 0 V; INLx in inverting mode 5 20 30 µA
IIH_INLx INLx Input logic high current VPIN (Pin Voltage) = 5 V; INLx in non-inverting mode 5 20 30 µA
VPIN (Pin Voltage) = 5 V; INLx in inverting mode 0 0.5 1.5 µA
IIL INHx, MODE Input logic low current VPIN (Pin Voltage) = 0 V;  -1 0 1 µA
IIH INHx, MODE Input logic high current VPIN (Pin Voltage) = 5 V;  5 20 30 µA
RPD_INHx INHx Input pulldown resistance To GND 120 200 280 kΩ
RPD_INLx INLx Input pulldown resistance To GND, INLx in non-inverting mode 120 200 280 kΩ
RPU_INLx INLx Input pullup resistance To INT_5V, INLx in inverting mode 120 200 280 kΩ
RPD_MODE MODE Input pulldown resistance To GND 120 200 280 kΩ
GATE DRIVERS (GHx, GLx, SHx, SLx)
VGHx_LO High-side gate drive low level voltage IGLx = -100 mA; VGVDD = 12V; No FETs connected 0 0.15 0.35 V
VGHx_HI High-side gate drive high level voltage (VBSTx - VGHx) IGHx = 100 mA; VGVDD = 12V; No FETs connected 0.3 0.6 1.2 V
VGLx_LO Low-side gate drive low level voltage IGLx = -100 mA; VGVDD = 12V; No FETs connected 0 0.15 0.35 V
VGLx_HI Low-side gate drive high level voltage (VGVDD - VGHx) IGHx = 100 mA; VGVDD = 12V; No FETs connected 0.3 0.6 1.2 V
IDRIVEP_HS High-side peak source gate current GHx-SHx = 12V  400 750 1200 mA
IDRIVEN_HS High-side peak sink gate current GHx-SHx = 0V  850 1500 2100 mA
IDRIVEP_LS Low-side peak source gate current GLx = 12V  400 750 1200 mA
IDRIVEN_LS Low-side peak sink gate current GLx = 0V  850 1500 2100 mA
tPD Input to output propagation delay INHx, INLx to GHx, GLx; VGVDD  = VBSTx - VSHx > 8V; SHx = 0V, No load on GHx and GLx 70 125 180 ns
tPD_match Matching propagation delay per phase GHx turning OFF to GLx turning ON, GLx turning OFF to GHx turning ON; VGVDD  = VBSTx - VSHx > 8V; SHx = 0V, No load on GHx and GLx -30 ±4 30 ns
tPD_match Matching propagation delay phase to phase GHx/GLx turning ON to GHy/GLy turning ON, GHx/GLx turning OFF to GHy/GLy turning OFF;  VGVDD  = VBSTx - VSHx > 8V; SHx = 0V, No load on GHx and GLx -30 ±4 30 ns
tR_GLx GLx rise time (10% to 90%) CLOAD = 1000 pF;  VGVDD  = VBSTx - VSHx > 8V; SHx = 0V 10 24 50 ns
tR_GHx GHx rise time (10% to 90%) CLOAD = 1000 pF;  VGVDD  = VBSTx - VSHx > 8V; SHx = 0V 10 24 50 ns
tF_GLx GLx fall time (90% to 10%) CLOAD = 1000 pF; VGVDD  = VBSTx - VSHx > 8V; SHx = 0V 5 12 30 ns
tF_GHx GHx fall time (90% to 10%) CLOAD = 1000 pF; VGVDD  = VBSTx - VSHx > 8V; SHx = 0V 5 12 30 ns
tDEAD Gate drive dead time DT pin connected to GND 150 215 280 ns
40 kΩ between DT pin and GND 150 200 260 ns
400 kΩ between DT pin and GND 1500 2000 2600 ns
tPW_MIN Minimum input pulse width on INHx, INLx that changes the output on GHx, GLx 40 70 150 ns
BOOTSTRAP DIODES
VBOOTD Bootstrap diode forward voltage IBOOT = 100 µA 0.45 0.7 0.85 V
IBOOT = 100 mA 2 2.3 3.1 V
RBOOTD Bootstrap dynamic resistance (ΔVBOOTD/ΔIBOOT) IBOOT = 100 mA and 80 mA 11 15 25 Ω
PROTECTION CIRCUITS
VGVDDUV Gate Driver Supply undervoltage lockout (GVDDUV) Supply rising 4.45 4.6 4.7 V
Supply falling 4.2 4.35 4.4 V
VGVDDUV_HYS Gate Driver Supply UV hysteresis Rising to falling threshold 250 280 310 mV
tGVDDUV Gate Driver Supply undervoltage deglitch time 5 10 13 µs
VBSTUV Boot Strap undervoltage lockout (VBSTx - VSHx) Supply rising 3.6 4.2 4.8 V
Boot Strap undervoltage lockout (VBSTx - VSHx) Supply falling 3.5 4 4.5 V
VBSTUV_HYS Bootstrap UV hysteresis Rising to falling threshold 200 mV
tBSTUV Bootstrap undervoltage deglitch time 6 10 22 µs
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