ZHCS091D February   2011  – March 2021 DRV8801-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Power Supervisor
      2. 7.3.2 Bridge Control
        1. 7.3.2.1 MODE 1
        2. 7.3.2.2 MODE 2
      3. 7.3.3 Fast Decay with Synchronous Rectification
      4. 7.3.4 Slow Decay with Synchronous Rectification (Brake Mode)
      5. 7.3.5 Charge Pump
      6. 7.3.6 SENSE
      7. 7.3.7 VPROPI
        1. 7.3.7.1 Connecting VPROPI Output to ADC
      8. 7.3.8 Protection Circuits
        1. 7.3.8.1 VBB Undervoltage Lockout (UVLO)
        2. 7.3.8.2 Overcurrent Protection (OCP)
        3. 7.3.8.3 Overtemperature Warning (OTW)
        4. 7.3.8.4 Overtemperature Shutdown (OTS)
      9. 7.3.9 Thermal Shutdown (TSD)
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Motor Voltage
        2. 8.2.2.2 Power Dissipation
        3. 8.2.2.3 Thermal Considerations
          1. 8.2.2.3.1 Junction-to-Ambiant Thermal Impedance (ƟJA)
        4. 8.2.2.4 Motor Current Trip Point
        5. 8.2.2.5 Sense Resistor Selection
        6. 8.2.2.6 Drive Current
      3. 8.2.3 Pulse-Width Modulating
        1. 8.2.3.1 Pulse-Width Modulating ENABLE
        2. 8.2.3.2 Pulse-Width Modulating PHASE
      4. 8.2.4 Application Curves
    3. 8.3 Parallel Configuration
      1. 8.3.1 Parallel Connections
      2. 8.3.2 Non – Parallel Connections
      3. 8.3.3 Wiring nFAULT as Wired OR
      4. 8.3.4 Electrical Considerations
        1. 8.3.4.1 Device Spacing
        2. 8.3.4.2 Recirculation Current Handling
        3. 8.3.4.3 Sense Resistor Selection
        4. 8.3.4.4 Maximum System Current
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 静电放电警告
    6. 11.6 术语表
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.3.5 Charge Pump

The charge pump is used to generate a supply above VBB to drive the source-side DMOS gates. A 0.1-μF ceramic monolithic capacitor should be connected between CP1 and CP2 for pumping purposes. A 0.1-μF ceramic monolithic capacitor should be connected between VCP and VBB to act as a reservoir to run the high-side DMOS devices.
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