米6体育平台手机版

ZHCS091D February 2011 – March 2021 DRV8801-Q1

PRODUCTION DATA

封装选项

机械数据 (封装 | 引脚)

RTY|16
- MPQF170A

散热焊盘机械数据 (封装 | 引脚)

RTY|16
- QFND060D

订购信息

6.5 Electrical Characteristics

over recommended operating conditions (unless otherwise noted)

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
POWER SUPPLIES (VBB)
VBB	VBB operating voltage			8		38	V
I_VBB	VBB operating supply current	f_PWM < 50 kHz			6		mA
I_VBB	VBB operating supply current	Charge pump on, outputs disabled			3.2		mA
I_VBBQ	VBB sleep-mode supply current	nSLEEP = 0, T_J = 25°C				10	μA
CONTROL INPUTS (PHASE, ENABLE, MODE1, MODE2, nSLEEP)
V_IL	Input logic low voltage	PHASE, ENABLE, MODE1, MODE2				0.8	V
V_IH	Input logic high voltage			2			V
V_IHYS	Input hysteresis			100	500	800	mV
I_IL	Input logic low current	PHASE, MODE1, MODE2	V_IN = 0.8 V	–20	< –2	20	µA
I_IH	Input logic high current	PHASE, MODE1, MODE2	V_IN = 2.0 V		< 1	20	µA
I_IL	Input logic low current	ENABLE	V_IN = 0.8 V		16	40	μA
I_IH	Input logic high current	ENABLE	V_IN = 2.0 V		40	100	μA
V_IL	Input logic low voltage	nSLEEP				0.8	V
V_IH	Input logic high voltage			2.7			V
I_IL	Input logic low current		V_IN = 0.8 V		<1	10	μA
I_IH	Input logic high current		V_IN = 2.7 V		27	50	μA
CONTROL OUTPUTS (nFAULT)
V_OL	Output logic low voltage	I_O = 1 mA				0.4	V
VBBNFR	VBB nFAULT release	8 V < VBB < 40 V			12	13.8	V
DMOS DRIVERS (OUT+, OUT-, SENSE, VPROPI)
R_DS(on)	Output ON resistance	Source driver, I_OUT = –2.8 A, T_J = 25°C			0.48		Ω
		Source driver, I_OUT = –2.8 A, T_J = 125°C			0.74	0.85
		Sink driver, I_OUT = 2.8 A, T_J = 25°C			0.35
		Sink driver, I_OUT = 2.8 A, T_J = 125°C			0.52	0.7
V_TRIP	SENSE trip voltage	R_{SENSE between SENSE and GND}			500		mV
V_f	Body diode forward voltage	Source diode, I_f = –2.8 A				1.4	V
V_f	Body diode forward voltage	Sink diode, I_f = 2.8 A				1.4	V
A_VDA	Differential AMP gain	SENSE = 0.1 V to 0.4 V			5		V/V
PROTECTION CIRCUITRY
VUV	UVLO threshold	VBB increasing			6.5	7.5	V
I_OCP	Overcurrent protection trip level	VBB = 8.0 approximately 38 V		3			A
T_OTW	Thermal warning temperature	Die temperature T_j⁽¹⁾			160		°C
T_{OTW HYS}	Thermal warning hysteresis	Die temperature T_j			15		°C
T_OTS	Thermal shutdown temperature	Die temperature T_j⁽²⁾			175		°C
T_{OTS HYS}	Thermal shutdown hysteresis	Die temperature T_j			15		°C

(1) Once the device reaches the thermal warning temperature of 160°C, the device remains in thermal warning until the device cools to 145°C. This is known as the thermal-warning hysteresis of the device.

(2) Once the device reaches the thermal shutdown temperature of 175°C, the device remains in thermal shutdown until the device cools to 160°C. This is known as the thermal-shutdown hysteresis of the device.