ZHCSNT9K July 2008 – March 2021 DRV8800 , DRV8801
PRODUCTION DATA
The charge pump is used to generate a supply above VBB to drive the source-side DMOS gates. A 0.1-μF ceramic monolithic capacitor should be connected between CP1 and CP2 for pumping purposes. A 0.1-μF ceramic monolithic capacitor, CStorage, should be connected between VCP and VBB to act as a reservoir to run the high-side DMOS devices. The VCP voltage level is internally monitored and, in the case of a fault condition, the outputs of the device are disabled.