ZHCSCK7A June   2014  – June 2014 DRV8802-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Handling Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 PWM Motor Drivers
      2. 7.3.2 Bridge Control
      3. 7.3.3 Current Regulation
      4. 7.3.4 Decay Mode and Braking
      5. 7.3.5 Blanking Time
      6. 7.3.6 nRESET and nSLEEP Operation
      7. 7.3.7 Protection Circuits
        1. 7.3.7.1 Overcurrent Protection (OCP)
        2. 7.3.7.2 Thermal Shutdown (TSD)
        3. 7.3.7.3 Undervoltage Lockout (UVLO)
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Drive Current
        2. 8.2.2.2 Slow-Decay SR (Brake Mode)
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance
    2. 9.2 Power Supply and Logic Sequencing
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Information
      1. 10.3.1 Thermal Protection
      2. 10.3.2 Power Dissipation
      3. 10.3.3 Heatsinking
  11. 11器件和文档支持
    1. 11.1 Trademarks
    2. 11.2 Electrostatic Discharge Caution
    3. 11.3 术语表
  12. 12机械封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

11 器件和文档支持

11.1 Trademarks

PowerPAD is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

11.2 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

11.3 术语表

SLYZ022 — TI 术语表。

这份术语表列出并解释术语、首字母缩略词和定义。
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