SLVSA73F April   2010  – July 2014 DRV8825

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Simplified Schematic
  5. 5 Revision History
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 Handling Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 PWM Motor Drivers
      2. 8.3.2 Current Regulation
      3. 8.3.3 Decay Mode
      4. 8.3.4 Blanking Time
      5. 8.3.5 Microstepping Indexer
      6. 8.3.6 nRESET, nENBL, and nSLEEP Operation
      7. 8.3.7 Protection Circuits
        1. 8.3.7.1 Overcurrent Protection (OCP)
        2. 8.3.7.2 Thermal Shutdown (TSD)
        3. 8.3.7.3 Undervoltage Lockout (UVLO)
    4. 8.4 Device Functional Modes
      1. 8.4.1 STEP/DIR Interface
      2. 8.4.2 Microstepping
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Stepper Motor Speed
        2. 9.2.2.2 Current Regulation
        3. 9.2.2.3 Decay Modes
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Bulk Capacitance
    2. 10.2 Power Supply and Logic Sequencing
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Protection
      1. 11.3.1 Power Dissipation
      2. 11.3.2 Heatsinking
  12. 12Device and Documentation Support
    1. 12.1 Trademarks
    2. 12.2 Electrostatic Discharge Caution
    3. 12.3 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

12 Device and Documentation Support

12.1 Trademarks

PowerPAD is a trademark of Texas Instruments.

12.2 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

12.3 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.
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