ZHCSCV7 August   2014 DRV8833C

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Handling Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 PWM Motor Drivers
      2. 7.3.2 Bridge Control and Decay Modes
      3. 7.3.3 Current Control
      4. 7.3.4 Decay Mode
      5. 7.3.5 Slow Decay
      6. 7.3.6 Sleep Mode
      7. 7.3.7 Parallel Mode
      8. 7.3.8 Protection Circuits
        1. 7.3.8.1 Overcurrent Protection (OCP)
        2. 7.3.8.2 Thermal Shutdown (TSD)
        3. 7.3.8.3 UVLO
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Stepper Motor Speed
        2. 8.2.2.2 Current Regulation
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
    1. 9.1 Sizing Bulk Capacitance for Motor Drive Systems
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 商标
    2. 11.2 静电放电警告
    3. 11.3 术语表
  12. 12机械封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature (unless otherwise noted) (1)
MIN MAX UNIT
Voltage Power supply (VM) –0.3 11.8 V
Internal regulator (VINT) –0.3 3.8 V
Control pins (AIN1, AIN2, BIN1, BIN2, nSLEEP, nFAULT) –0.3 7 V
Continuous phase node pins (AOUT1, AOUT2, BOUT1, BOUT2) –0.3 VM + 0.5 V
Pulsed 10 µs phase node pins (AOUT1, AOUT2, BOUT1, BOUT2) –1 VM + 1 V
Continuous shunt amplifier input pins (AISEN, BISEN) –0.3 0.5 V
Pulsed 10 µs shunt amplifier input pins (AISEN, BISEN) –1 1 V
Peak drive current (AOUT1, AOUT2, BOUT1, BOUT2, AISEN, BISEN) Internally limited A
TJ Operating junction temperature –40 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range –65 150 °C
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) –2000 2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) –1000 1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VM Power supply voltage range(1) 2.7 10.8 V
VI Logic level input voltage 0 5.5 V
IRMS Motor RMS current(2) PWP package 0 0.7 A
RTE package 0 0.6 A
ƒPWM Applied PWM signal to AIN1, AIN2, BIN1, or BIN2 0 200 kHz
TA Operating ambient temperature –40 85 °C
(1) Note that when VM is below 5 V, RDS(ON) increases and maximum output current is reduced.
(2) Power dissipation and thermal limits must be observed.

6.4 Thermal Information

THERMAL METRIC(1) DRV8833C UNIT
HTSSOP QFN
16 PINS 16 PINS
RθJA Junction-to-ambient thermal resistance 40.5 44.7 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 32.9 48.5
RθJB Junction-to-board thermal resistance 28.8 16.8
ψJT Junction-to-top characterization parameter 0.6 0.7
ψJB Junction-to-board characterization parameter 11.5 16.7
RθJC(bot) Junction-to-case (bottom) thermal resistance 4.8 4.2
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLIES (VM, VINT)
VM VM operating voltage 2.7 10.8 V
IVM VM operating supply current VM = 5 V, xINx low, nSLEEP high 1.7 3 mA
IVMQ VM sleep mode supply current VM = 5 V, nSLEEP low 1.6 2.7 μA
tSLEEP Sleep time nSLEEP low to sleep mode 10 µs
tWAKE Wake-up time nSLEEP high to output transition 155 μs
tON Turn-on time VM > VUVLO to output transition 25 μs
VINT Internal regulator voltage VM = 5 V 3 3.3 3.6 V
CONTROL INPUTS (AIN1, AIN2, BIN1, BIN2, nSLEEP)
VIL Input logic low voltage xINx 0 0.7 V
nSLEEP 0 0.5
VIH Input logic high voltage xINx 2 5.5 V
nSLEEP 2.5 5.5
VHYS Input logic hysteresis 350 400 650 mV
IIL Input logic low current VIN = 0 V –1 1 μA
IIH Input logic high current VIN = 5 V 50 μA
RPD Pulldown resistance xINx 100 150 250 kΩ
nSLEEP 380 500 750
tDEG Input deglitch time 575 ns
tPROP Propagation delay INx to OUTx VM = 5 V 1.2 μs
CONTROL OUTPUTS (nFAULT)
VOL Output logic low voltage IO = 5 mA 0.5 V
IOH Output logic high leakage RPULLUP = 1 kΩ to 5 V –1 1 μA
MOTOR DRIVER OUTPUTS (AOUT1, AOUT2, BOUT1, BOUT2)
RDS(ON) High-side FET on-resistance VM = 5 V, I = 0.2 A, TA = 25°C 1180 mΩ
VM = 5 V, I = 0.2 A, TA = 85°C(1) 1400 1475
VM = 2.7 V, I = 0.2 A, TA = 25°C 1550
VM = 2.7 V, I = 0.2 A, TA = 85°C(1) 1875 1975
RDS(ON) Low-side FET on-resistance VM = 5 V, I = 0.2 A, TA = 25°C 555 mΩ
VM = 5 V, I = 0.2 A, TA = 85°C(1) 675 705
VM = 2.7 V, I = 0.2 A, TA = 25°C 635
VM = 2.7 V, I = 0.2 A, TA = 85°C(1) 775 815
IOFF Off-state leakage current VM = 5 V –1 1 μA
tRISE Output rise time VM = 5 V; RL = 16 Ω to GND 70 ns
tFALL Output fall time VM = 5 V; RL = 16 Ω to VM 80 ns
tDEAD Output dead time Internal dead time 450 ns
PWM CURRENT CONTROL (AISEN, BISEN)
VTRIP xISEN trip voltage 160 200 240 mV
tOFF Current control constant off time Internal PWM constant off time 20 µs
PROTECTION CIRCUITS
VUVLO VM undervoltage lockout VM falling; UVLO report 2.6 V
VM rising; UVLO recovery 2.7
VUVLO,HYS VM undervoltage hysteresis Rising to falling threshold 90 mV
IOCP Overcurrent protection trip level 1 A
tDEG Overcurrent deglitch time 2.3 μs
tOCP Overcurrent protection period 1.4 ms
TTSD(1) Thermal shutdown temperature Die temperature, TJ 150 °C
THYS Thermal shutdown hysteresis Die temperature, TJ 20 °C
(1) Not tested in production; based on design and characterization data

6.6 Typical Characteristics

D001_SLVSCP9.gif
Figure 1. Supply Current
D004_SLVSCP9.gif
Figure 3. High-Side RDS(ON)
D003_SLVSCP9.gif
Figure 5. VINT Over VM
D002_SLVSCP9.gif
Figure 2. Sleep Current
D005_SLVSCP9.gif
Figure 4. Low-Side RDS(ON)
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