ZHCSFB2A July   2016  – July 2016 DRV8837C

PRODUCTION DATA.  

  1. 特性
  2. 应用范围
  3. 说明
  4. 修订历史记录
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Bridge Control
      2. 7.3.2 Sleep Mode
      3. 7.3.3 Power Supplies and Input Pins
      4. 7.3.4 Protection Circuits
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Motor Voltage
        2. 8.2.2.2 Low-Power Operation
      3. 8.2.3 Application Curves
  9. Power Supply Recommendations
    1. 9.1 Bulk Capacitance
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Power Dissipation
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档 
    2. 11.2 接收文档更新通知
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

10 Layout

10.1 Layout Guidelines

The VM and VCC pins should be bypassed to GND using low-ESR ceramic bypass capacitors with a recommended value of 0.1 µF rated for the VM and VCC supplies. These capacitors should be placed as close to the VM and VCC pins as possible with a thick trace or ground plane connection to the device GND pin. In addition bulk capacitance is required on the VM pin.

10.2 Layout Example

DRV8837C layout.gif Figure 13. Simplified Layout Example

10.3 Power Dissipation

Power dissipation in the DRV8837C device is dominated by the power dissipated in the output FET resistance, or RDS(ON). Use Equation 1 to estimate the average power dissipation when running a brushed-DC motor.

Equation 1. DRV8837C eq_Ptot_SLVSCG6.gif

where

  • PTOT is the total power dissipation
  • RDS(ON) is the resistance of the HS plus LS FETs
  • IOUT(RMS) is the RMS or DC output current being supplied to the load

The maximum amount of power that can be dissipated in the device is dependent on ambient temperature and heatsinking.

NOTE

The value of RDS(ON) increases with temperature, so as the device heats, the power dissipation increases.

The DRV8837C device has thermal shutdown protection. If the die temperature exceeds approximately 150°C, the device is disabled until the temperature drops to a safe level.

Any tendency of the device to enter thermal shutdown is an indication of either excessive power dissipation, insufficient heatsinking, or too high an ambient temperature.