ZHCSCM3 July   2014 DRV8842-EP

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
  4. 4 简化电路原理图
  5. 5 修订历史记录
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 Handling Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Motor Driver Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 PWM Motor Drivers
      2. 8.3.2 Bridge Control
      3. 8.3.3 Current Regulation
      4. 8.3.4 Blanking Time
      5. 8.3.5 nRESET and nSLEEP Operation
      6. 8.3.6 Protection Circuits
        1. 8.3.6.1 Overcurrent Protection (OCP)
        2. 8.3.6.2 Thermal Shutdown (TSD)
        3. 8.3.6.3 Undervoltage Lockout (UVLO)
      7. 8.3.7 Thermal Protection
      8. 8.3.8 Heatsinking
    4. 8.4 Device Functional Modes
      1. 8.4.1 Decay Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Power Dissipation
        2. 9.2.2.2 Current Regulation Considerations
        3. 9.2.2.3 Slow, Fast, and Mixed Decay Modes
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Bulk Capacitance
    2. 10.2 Power Supply and Logic Sequencing
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 Trademarks
    2. 12.2 Electrostatic Discharge Caution
    3. 12.3 术语表
  13. 13机械封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)(2)
MIN MAX UNIT
V(VM) Power supply voltage –0.3 47 V
Digital pin voltage –0.5 7 V
V(VREF) Input voltage –0.3 4 V
ISEN pins –0.3 0.8 V
Peak motor drive output current, t < 1 μs Internally limited A
Continuous motor drive output current(3) 5 A
Continuous total power dissipation See Thermal Information
TJ Operating virtual junction temperature range –55 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
(3) Power dissipation and thermal limits must be observed.

7.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range –60 150 °C
V(ESD)(1) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(2) –500 4000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(3) –250 1500
(1) Electrostatic discharge (ESD) to measure device sensitivity/immunity to damage caused by assembly line electrostatic discharges into the device.
(2) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as 1 kV may actually have higher performance.
(3) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Pins listed as 250 V may actually have higher performance.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VM Motor power supply voltage range(1) 8.2 45 V
V(VREF) VREF input voltage(2) 1 3.5 V
IV3P3 V3P3OUT load current 0 1 mA
ƒPWM Externally applied PWM frequency 0 100 kHz
TJ Operating virtual junction temperature range –55 125 °C
(1) All VM pins must be connected to the same supply voltage.
(2) Operational at V(VREF) between 0 and 1 V, but accuracy is degraded.

7.4 Thermal Information

THERMAL METRIC(1) DRV8842-EP UNIT
PWP
28 PINS
RθJA Junction-to-ambient thermal resistance(2) 35.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance(3) 15.6
RθJB Junction-to-board thermal resistance(4) 13.5
ψJT Junction-to-top characterization parameter(5) 0.4
ψJB Junction-to-board characterization parameter(6) 13.3
RθJC(bot) Junction-to-case (bottom) thermal resistance(7) 1.4
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as specified in JESD51-7, in an environment described in JESD51-2a.
(3) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(4) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8.
(5) The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7).
(6) The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA , using a procedure described in JESD51-2a (sections 6 and 7).
(7) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.

7.5 Electrical Characteristics

over recommended operating junction temperature range
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLIES
IVM VM operating supply current VM = 24 V, ƒPWM < 50 kHz 5 8 mA
IVMQ VM sleep mode supply current VM = 24 V 10 20 μA
VUVLO VM undervoltage lockout voltage VM rising 7.8 8.4 V
V3P3OUT REGULATOR
V3P3 V3P3OUT voltage IOUT = 0 to 1 mA 3.1 3.3 3.5 V
LOGIC-LEVEL INPUTS
VIL Input low voltage 0.6 0.7 V
VIH Input high voltage 2.2 5.25 V
VHYS Input hysteresis 0.3 0.45 0.65 V
IIL Input low current VIN = 0 –20 20 μA
IIH Input high current VIN = 3.3 V 33 100 μA
RPD Internal pulldown resistance 100 kΩ
nFAULT OUTPUT (OPEN-DRAIN OUTPUT)
VOL Output low voltage IO = 5 mA 0.5 V
IOH Output high leakage current VO = 3.3 V 1 μA
DECAY INPUT
VIL Input low threshold voltage For slow decay (brake) mode 0 0.8 V
VIH Input high threshold voltage For fast decay (coast) mode 2 V
IIN Input current ±40 μA
RPU Internal pullup resistance (to 3.3 V) 130 kΩ
RPD Internal pulldown resistance 80 kΩ
H-BRIDGE FETS
RDS(ON) HS FET on resistance VM = 24 V, IO = 1 A 0.13 0.17 Ω
RDS(ON) LS FET on resistance VM = 24 V, IO = 1 A 0.13 0.17 Ω
IOFF Off-state leakage current –79 96 μA
PROTECTION CIRCUITS
IOCP Overcurrent protection trip level 5 A
tTSD Thermal shutdown temperature Die temperature 150 160 180 °C
CURRENT CONTROL
IREF VREF input current V(VREF) = 3.3 V –3 3 μA
VTRIP ISENSE trip voltage V(VREF) = 3.3 V, 100% current setting 635 660 685 mV
ΔITRIP Current trip accuracy
(relative to programmed value)		 V(VREF) = 3.3 V, 5% current setting –25% 25%
V(VREF) = 3.3 V, 10% to 34% current setting –15% 15%
V(VREF) = 3.3 V, 38% to 67% current setting –10% 10%
V(VREF) = 3.3 V, 71% to 100% current setting –5% 5%
AISENSE Current sense amplifier gain Reference only 5 V/V

7.6 Motor Driver Timing Requirements

MIN TYP MAX UNIT
ƒPWM Internal current control PWM frequency 50 kHz
tBLANK Current sense blanking time 3.75 μs
tR Rise time 30 220 ns
tF Fall time 30 220 ns

7.7 Typical Characteristics

D001_SLVSCH4.gif
Figure 1. IVM vs Temperature
D003_SLVSCH4.gif
Figure 3. RDS(ON) vs Temperature
D002_SLVSCH4.gif
Figure 2. IVMQ vs Temperature
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