ZHCSG92A June   2014  – March 2017 DRV8846

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 PWM Motor Drivers
      2. 7.3.2 Micro-Stepping Indexer
      3. 7.3.3 Current Regulation
      4. 7.3.4 Decay Mode
      5. 7.3.5 Blanking Time
      6. 7.3.6 Protection Circuits
        1. 7.3.6.1 Overcurrent Protection (OCP)
        2. 7.3.6.2 Thermal Shutdown (TSD)
        3. 7.3.6.3 Undervoltage Lockout (UVLO)
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Stepper Motor Speed
        2. 8.2.2.2 Current Regulation
        3. 8.2.2.3 Decay Modes
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档
    2. 11.2 接收文档更新通知
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature referenced with respect to GND (unless otherwise noted)(1)
MIN MAX UNIT
Power supply voltage (VM) –0.3 20 V
Power supply voltage ramp rate (VM) 0 2 V/µs
Internal regulator voltage (VINT) –0.3 3.6 V
Analog input pin voltage (VREF) –0.3 3.6 V
Control pin voltage (nENABLE, STEP, DIR, I0, I1, M0, M1, DEC0, DEC1, TOFF_SEL, nSLEEP, nFAULT, ADEC) –0.3 7.0 V
Continuous phase node pin voltage (AOUT1, AOUT2, BOUT1, BOUT2) –0.3 VM + 0.6 V
Continuous shunt amplifier input pin voltage (AISEN, BISEN)(2) –0.6 0.6 V
Peak drive current (AOUT1, AOUT2, BOUT1, BOUT2, AISEN, BISEN) Internally limited A
TJ Operating junction temperature –40 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Transients of ±1 V for less than 25 ns are acceptable.

6.2 ESD Ratings

MAX UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±4000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VM Power supply voltage range(1) 4 18 V
VREF Reference rms voltage range(3) 1 3.3 V
ƒPWM Applied STEP signal 0 250 kHz
IVINT VINT external load current 1 mA
IFS Motor full-scale current per H-bridge(2) 0 1.4 A
TA Operating ambient temperature –40 85 °C
(1) Note that RDS(ON) increases and maximum output current is reduced at VM supply voltages below 5 V
(2) Power dissipation and thermal limits must be observed
(3) Operational at VREF between 0 to 1 V, but accuracy is degraded

6.4 Thermal Information

THERMAL METRIC(1) DRV8846 UNIT
RGE (VQFN)
24 PINS
RθJA Junction-to-ambient thermal resistance 34 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 36.9
RθJB Junction-to-board thermal resistance 12.5
ψJT Junction-to-top characterization parameter 0.4
ψJB Junction-to-board characterization parameter 12.5
RθJC(bot) Junction-to-case (bottom) thermal resistance 2.5
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

TA = 25°C, over recommended operating conditions unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLIES (VM, VINT)
VM VM operating voltage 4 18 V
IVM VM operating supply current VM = 12 V, excluding winding current, nSLEEP = 1, nENBL = 0 or 1 3.5 4.5 5.5 mA
IVMQ VM sleep mode supply current VM = 12 V, nSLEEP = 0, nENBL = 0 or 1 0.5 1.2 3 μA
tSLEEP Sleep time nSLEEP = 0 to sleep mode 1 ms
tWAKE Wake time nSLEEP = 1 to output transition 1 ms
tON Power-on time VM > VUVLO rising to output transition 1 ms
VINT VINT voltage VM > 4 V, IOUT = 0 A to 1 mA 3.13 3.3 3.47 V
LOGIC-LEVEL INPUTS (STEP, DIR, nENBL, nSLEEP, ADEC)
VIL Input logic low voltage 0 0.7 V
VIH Input logic high voltage 1.6 5.5 V
VHYS Input logic hysteresis 100 mV
IIL Input logic low current VIN = 0 V –1 1 μA
IIH Input logic high current VIN = 5 V 1 30 μA
RPD Pulldown resistance nENBL, STEP, DIR, ADEC 200 kΩ
nSLEEP 500
tDEG Input deglitch time 200 ns
tPROP Propagation delay STEP edge to current change 600 ns
TRI-LEVEL INPUTS (I0, I1, M0, M1, DEC0, DEC1, TOFF_SEL)
VIL Tri-level input logic low voltage 0 0.7 V
VIZ Tri-level input Hi-Z voltage 1.1 V
VIH Tri-level input logic high voltage 1.6 5.5 V
VHYS Tri-level input hysteresis 100 mV
IIL Tri-level input logic low current VIN = 0 V –30 –1 μA
IIH Tri-level input logic high current VIN = 5 V 1 30 μA
RPD Tri-level pulldown resistance To GND 170 kΩ
RPU Tri-level pullup resistance To VINT 340 kΩ
CONTROL OUTPUTS (nFAULT)
VOL Output logic low voltage IO = 5 mA 0.5 V
IOH Output logic high leakage VO = 3.3 V –1 1 μA
MOTOR DRIVER OUTPUTS (AOUT1, AOUT2, BOUT1, BOUT2)
RDS(ON) High-side FET on resistance VM = 12 V, I = 0.5 A, TJ = 25°C 550 mΩ
VM = 12 V, I = 0.5 A, TJ = 85°C(1) 660
RDS(ON) Low-side FET on resistance VM = 12 V, I = 0.5 A, TJ = 25°C 350 mΩ
VM = 12 V, I = 0.5 A, TJ = 85°C(1) 420
IOFF Off-state leakage current VM = 5 V, TJ = 25°C –1 1 μA
tRISE Output rise time 60 ns
tFALL Output fall time 60 ns
tDEAD Output dead time Internal dead time 200 ns
PWM CURRENT CONTROL (VREF, AISEN, BISEN)
IREF Externally applied VREF input current VREF = 1 to 3.3 V 1 μA
VTRIP xISEN trip voltage For 100% current step with VREF = 3.3 V 500 mV
AISENSE Current sense amplifer gain Reference only 6.6 V/V
tOFF Current control constant off time TOFF_SEL = GND 20 μs
TOFF_SEL = Hi-Z 10
TOFF_SEL = VINT 30
PROTECTION CIRCUITS
VUVLO VM undervoltage lockout VM falling; UVLO report 2.9 V
VM rising; UVLO recovery 3
IOCP Overcurrent protection trip level 2 A
tOCP Overcurrent deglitch time 2.8 μs
tRETRY Overcurrent protection period 1.6 ms
TTSD Thermal shutdown temperature Die temperature TJ 150 160 180 °C
THYS Thermal shutdown hysteresis Die temperature TJ 50 °C
(1) Not tested in production; limits are based on characterization data

6.6 Timing Requirements

TA = 25°C, over recommended operating conditions unless otherwise noted
NO. MIN MAX UNIT
1 ƒSTEP Step frequency 250 kHz
2 tWH(STEP) Pulse duration, STEP high 1.9 μs
3 tWL(STEP) Pulse duration, STEP low 1.9 μs
4 tSU(STEP) Setup time, DIR or Mx to STEP rising 200 ns
5 tH(STEP) Hold time, DIR or Mx to STEP rising 200 ns
DRV8846 tim_STEP_DIR_LLSEK2.gif Figure 1. Timing Diagram

6.7 Typical Characteristics

DRV8846 D001_SLLSEK2.gif
Figure 2. IVM vs VM
DRV8846 D003_SLLSEK2.gif
Figure 4. RDSON vs VM
DRV8846 D002_SLLSEK2.gif
Figure 3. IVMQ vs VM
DRV8846 D004_SLLSEK2.gif
Figure 5. RDSON vs Temperature
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