ZHCSCX5A October   2014  – November 2015 DRV8848

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 PWM Motor Drivers
      2. 7.3.2 Bridge Control
      3. 7.3.3 Parallel Operation
      4. 7.3.4 Current Regulation
      5. 7.3.5 Current Recirculation and Decay Modes
      6. 7.3.6 Protection Circuits
        1. 7.3.6.1 OCP
        2. 7.3.6.2 TSD
        3. 7.3.6.3 UVLO
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Current Regulation
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance Sizing
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 社区资源
    2. 11.2 商标
    3. 11.3 静电放电警告
    4. 11.4 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range referenced with respect to GND (unless otherwise noted) (1)
MIN MAX UNIT
Power supply voltage (VM) –0.3 20 V
Power supply voltage ramp rate (VM) 0 2 V/µs
Internal regulator voltage (VINT) –0.3 3.6 V
Analog input pin voltage (VREF) –0.3 3.6 V
Control pin voltage (AIN1, AIN2, BIN1, BIN2, nSLEEP, nFAULT) –0.3 7 V
Continuous phase node pin voltage (AOUT1, AOUT2, BOUT1, BOUT2) –0.3 VVM + 0.6 V
Continuous shunt amplifier input pin voltage (AISEN, BISEN)(2) –0.6 0.6 V
Peak drive current (AOUT1, AOUT2, BOUT1, BOUT2, AISEN, BISEN) Internally limited A
TJ Operating junction temperature –40 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Transients of ±1 V for less than 25 ns are acceptable.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±4000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN MAX UNIT
VVM Power supply voltage range(1) 4 18 V
VVREF Reference rms voltage range(3) 1 3.3 V
ƒPWM Applied STEP signal 0 250 kHz
IVINT VINT external load current 1 mA
Irms Motor rms current per H-bridge(2) 0 1 A
TA Operating ambient temperature –40 85 °C
(1) Note that RDS(ON) increases and maximum output current is reduced at VM supply voltages below 5 V.
(2) Power dissipation and thermal limits must be observed.
(3) Operational at VREF between 0 and 1 V, but accuracy is degraded.

6.4 Thermal Information

THERMAL METRIC(1) DRV8848 UNIT
PWP (HTSSOP)
16 PINS
RθJA Junction-to-ambient thermal resistance 40.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 32.7 °C/W
RθJB Junction-to-board thermal resistance 28.7 °C/W
ψJT Junction-to-top characterization parameter 0.6 °C/W
ψJB Junction-to-board characterization parameter 11.4 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 4.7 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

TA = 25°C, over recommended operating conditions unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLIES (VM, VINT)
VVM VM operating voltage 4 18 V
IVM VM operating supply current VVM = 12 V, excluding winding current, nSLEEP = 1 2.5 3.8 5.5 mA
IVMQ VM sleep mode supply current VVM = 12 V, nSLEEP = 0 0.5 1.2 3 μA
tSLEEP Sleep time nSLEEP = 0 to sleep mode 1 ms
tWAKE Wake time nSLEEP = 1 to output transition 1 ms
tON Power-on time VVM > VUVLO rising to output transition 1 ms
VINT VINT voltage VVM > 4 V, IOUT = 0 A to 1 mA 3.13 3.3 3.47 V
LOGIC-LEVEL INPUTS (BIN1, BIN2, NSLEEP)
VIL Input logic low voltage 0 0.7 V
VIH Input logic high voltage 1.6 5.5 V
VHYS Input logic hysteresis 100 mV
IIL Input logic low current VIN = 0 V –1 1 μA
IIH Input logic high current VIN = 5 V 1 30 μA
RPD Pulldown resistance BIN1, BIN2 200 kΩ
nSLEEP 500
tDEG Input deglitch time AIN1 or AIN2 400 ns
BIN1 or BIN2 200 ns
tPROP Propagation delay AIN1 or AIN2 edge to output change 800 ns
BIN1 or BIN2 edge to output change 400 ns
TRI-LEVEL INPUTS (AIN1, AIN2)
VIL Tri-level input logic low voltage 0 0.7 V
VIZ Tri-level input Hi-Z voltage 1.1 V
VIH Tri-level input logic high voltage 1.6 5.5 V
VHYS Tri-level input hysteresis 100 mV
IIL Tri-level input logic low current VIN = 0 V –30 –1 μA
IIH Tri-level input logic high current VIN = 5 V 1 30 μA
RPD Tri-level pulldown resistance To GND 170 kΩ
RPU Tri-level pullup resistance To VINT 340 kΩ
CONTROL OUTPUTS (NFAULT)
VOL Output logic low voltage IO = 5 mA 0.5 V
IOH Output logic high leakage VO = 3.3 V –1 1 μA
MOTOR DRIVER OUTPUTS (AOUT1, AOUT2, BOUT1, BOUT2)
RDS(ON) High-side FET on-resistance VVM = 12 V, I = 0.5 A, TJ = 25°C 550 mΩ
VVM = 12 V, I = 0.5 A, TJ = 85°C(1) 660
RDS(ON) Low-side FET on-resistance VVM = 12 V, I = 0.5 A, TJ = 25°C 350 mΩ
VVM = 12 V, I = 0.5 A, TJ = 85°C(1) 420
IOFF Off-state leakage current VVM = 5 V, TJ = 25°C –1 1 μA
tRISE Output rise time 60 ns
tFALL Output fall time 60 ns
tDEAD Output dead time Internal dead time 200 ns
PWM CURRENT CONTROL (VREF, AISEN, BISEN)
IREF Externally applied VREF input current VVREF = 1 to 3.3 V 1 μA
VTRIP xISEN trip voltage For 100% current step with VVREF = 3.3 V 500 mV
tBLANK Current sense blanking time 1.8 μs
AISENSE Current sense amplifier gain Reference only 6.6 V/V
tOFF Current control constant off time 20 μs
PROTECTION CIRCUITS
VUVLO VM undervoltage lockout VVM falling; UVLO report 2.9 V
VVM rising; UVLO recovery 3
IOCP Overcurrent protection trip level 2 A
tDEG Overcurrent deglitch time 2.8 μs
tOCP Overcurrent protection period 1.6 ms
TTSD (1) Thermal shutdown temperature Die temperature TJ 150 160 180 °C
THYS (1) Thermal shutdown hysteresis Die temperature TJ 50 °C
(1) Not tested in production; limits are based on characterization data

6.6 Timing Requirements

TA = 25°C, over recommended operating conditions unless otherwise noted
NO. MIN MAX UNIT
1 t1 Delay time, xIN1 to xOUT1 100 600 ns
2 t2 Delay time, xIN2 to xOUT1 100 600 ns
3 t3 Delay time, xIN1 to xOUT2 100 600 ns
4 t4 Delay time, xIN2 to xOUT2 100 600 ns
5 tF Output rise time 50 150 ns
6 tR Output fall time 50 150 ns
DRV8848 tim_LLSEL7.gif Figure 1. Timing Diagram

6.7 Typical Characteristics

DRV8848 D001_SLLSEL7.gif
Figure 2. IVM vs VVM
DRV8848 D003_SLLSEL7.gif
Figure 4. RDSON vs VVM
DRV8848 D002_SLLSEL7.gif
Figure 3. IVMQ vs VVM
DRV8848 D004_SLLSEL7.gif
Figure 5. RDSON vs Temperature
千亿体育app官网登录(中国)官方网站IOS/安卓通用版/手机APP | 米乐app下载官网（中国）|ios|Android/通用版APP最新版 | 米乐|米乐·M6（中国大陆）官方网站 | 千亿体育登陆地址 | 华体会体育（中国）HTH·官方网站 | 千赢qy国际_全站最新版千赢qy国际V6.2.14安卓/IOS下载 | 18新利网v1.2.5|中国官方网站 | bob电竞真人（中国官网）安卓/ios苹果/电脑版【1.97.95版下载】 | 千亿体育app官方下载(中国)官方网站IOS/安卓/手机APP下载安装 |