ZHCSIO5B October   2017  – January 2021 DRV8873-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SPI Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Bridge Control
        1. 7.3.1.1 Control Modes
        2. 7.3.1.2 Half-Bridge Operation
        3. 7.3.1.3 22
        4. 7.3.1.4 Internal Current Sense and Current Regulation
        5. 7.3.1.5 Slew-Rate Control
        6. 7.3.1.6 Dead Time
        7. 7.3.1.7 Propagation Delay
        8. 7.3.1.8 nFAULT Pin
        9. 7.3.1.9 nSLEEP as SDO Reference
      2. 7.3.2 Motor Driver Protection Circuits
        1. 7.3.2.1 VM Undervoltage Lockout (UVLO)
        2. 7.3.2.2 VCP Undervoltage Lockout (CPUV)
        3. 7.3.2.3 Overcurrent Protection (OCP)
          1. 7.3.2.3.1 Latched Shutdown (OCP_MODE = 00b)
          2. 7.3.2.3.2 Automatic Retry (OCP_MODE = 01b)
          3. 7.3.2.3.3 Report Only (OCP_MODE = 10b)
          4. 7.3.2.3.4 Disabled (OCP_MODE = 11b)
        4. 7.3.2.4 Open-Load Detection (OLD)
          1. 7.3.2.4.1 Open-Load Detection in Passive Mode (OLP)
          2. 7.3.2.4.2 Open-Load Detection in Active Mode (OLA)
        5. 7.3.2.5 Thermal Shutdown (TSD)
          1. 7.3.2.5.1 Latched Shutdown (TSD_MODE = 0b)
          2. 7.3.2.5.2 Automatic Recovery (TSD_MODE = 1b)
        6. 7.3.2.6 Thermal Warning (OTW)
      3. 7.3.3 Hardware Interface
        1. 7.3.3.1 MODE (Tri-Level Input)
        2. 7.3.3.2 Slew Rate
    4. 7.4 Device Functional Modes
      1. 7.4.1 Motor Driver Functional Modes
        1. 7.4.1.1 Sleep Mode (nSLEEP = 0)
        2. 7.4.1.2 Disable Mode (nSLEEP = 1, DISABLE = 1)
        3. 7.4.1.3 Operating Mode (nSLEEP = 1, DISABLE = 0)
        4. 7.4.1.4 nSLEEP Reset Pulse
    5. 7.5 Programming
      1. 7.5.1 Serial Peripheral Interface (SPI) Communication
        1. 7.5.1.1 SPI Format
        2. 7.5.1.2 SPI for a Single Slave Device
        3. 7.5.1.3 SPI for Multiple Slave Devices in Parallel Configuration
        4. 7.5.1.4 SPI for Multiple Slave Devices in Daisy Chain Configuration
    6. 7.6 Register Maps
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
        1. 8.2.1.1 Motor Voltage
        2. 8.2.1.2 Drive Current and Power Dissipation
        3. 8.2.1.3 Sense Resistor
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Thermal Considerations
        2. 8.2.2.2 Heatsinking
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance Sizing
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 静电放电警告
    6. 11.6 术语表
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

10.1 Layout Guidelines

Each VM pin must be bypassed to ground using low-ESR ceramic bypass capacitors with recommended values of 0.1 μF rated for VM. These capacitors should be placed as close to the VM pins as possible with a thick trace or ground plane connection to the device GND pin.

Additional bulk capacitance is required to bypass the high current path. This bulk capacitance should be placed such that it minimizes the length of any high current paths. The connecting metal traces should be as wide as possible, with numerous vias connecting PCB layers. These practices minimize inductance and allow the bulk capacitor to deliver high current.

Place a low-ESR ceramic capacitor between the CPL and CPH pins. This capacitor should be 47 nF, rated for VM, and be of type X5R or X7R. Additionally, place a low-ESR ceramic capacitor between the VCP and VM pins. This capacitor should be 1 µF, rated for 16 V, and be of type X5R or X7R.

The current sense resistors should be placed as close as possible to the device pins to minimize trace inductance between the device pin and resistors.
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