ZHCSIO5B October   2017  – January 2021 DRV8873-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SPI Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Bridge Control
        1. 7.3.1.1 Control Modes
        2. 7.3.1.2 Half-Bridge Operation
        3. 7.3.1.3 22
        4. 7.3.1.4 Internal Current Sense and Current Regulation
        5. 7.3.1.5 Slew-Rate Control
        6. 7.3.1.6 Dead Time
        7. 7.3.1.7 Propagation Delay
        8. 7.3.1.8 nFAULT Pin
        9. 7.3.1.9 nSLEEP as SDO Reference
      2. 7.3.2 Motor Driver Protection Circuits
        1. 7.3.2.1 VM Undervoltage Lockout (UVLO)
        2. 7.3.2.2 VCP Undervoltage Lockout (CPUV)
        3. 7.3.2.3 Overcurrent Protection (OCP)
          1. 7.3.2.3.1 Latched Shutdown (OCP_MODE = 00b)
          2. 7.3.2.3.2 Automatic Retry (OCP_MODE = 01b)
          3. 7.3.2.3.3 Report Only (OCP_MODE = 10b)
          4. 7.3.2.3.4 Disabled (OCP_MODE = 11b)
        4. 7.3.2.4 Open-Load Detection (OLD)
          1. 7.3.2.4.1 Open-Load Detection in Passive Mode (OLP)
          2. 7.3.2.4.2 Open-Load Detection in Active Mode (OLA)
        5. 7.3.2.5 Thermal Shutdown (TSD)
          1. 7.3.2.5.1 Latched Shutdown (TSD_MODE = 0b)
          2. 7.3.2.5.2 Automatic Recovery (TSD_MODE = 1b)
        6. 7.3.2.6 Thermal Warning (OTW)
      3. 7.3.3 Hardware Interface
        1. 7.3.3.1 MODE (Tri-Level Input)
        2. 7.3.3.2 Slew Rate
    4. 7.4 Device Functional Modes
      1. 7.4.1 Motor Driver Functional Modes
        1. 7.4.1.1 Sleep Mode (nSLEEP = 0)
        2. 7.4.1.2 Disable Mode (nSLEEP = 1, DISABLE = 1)
        3. 7.4.1.3 Operating Mode (nSLEEP = 1, DISABLE = 0)
        4. 7.4.1.4 nSLEEP Reset Pulse
    5. 7.5 Programming
      1. 7.5.1 Serial Peripheral Interface (SPI) Communication
        1. 7.5.1.1 SPI Format
        2. 7.5.1.2 SPI for a Single Slave Device
        3. 7.5.1.3 SPI for Multiple Slave Devices in Parallel Configuration
        4. 7.5.1.4 SPI for Multiple Slave Devices in Daisy Chain Configuration
    6. 7.6 Register Maps
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
        1. 8.2.1.1 Motor Voltage
        2. 8.2.1.2 Drive Current and Power Dissipation
        3. 8.2.1.3 Sense Resistor
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Thermal Considerations
        2. 8.2.2.2 Heatsinking
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance Sizing
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 静电放电警告
    6. 11.6 术语表
  12. 12Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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7.3.1.6 Dead Time

The dead time (t(DEAD)) is measured as the time when the OUTx pin is in the Hi-Z state between turning off one of the half bridge MOSFETs and turning on the other. For example, the output is in the Hi-Z state between turning off the high-side MOSFET and turning on the low-side MOSFET, or turning on the high-side MOSFET and turning off the low-side MOSFET.

GUID-4165666E-CAB9-4711-AFD0-1321996DCEF2-low.gifFigure 7-9 Propagation Delay Time

If the output pin is measured during the tDEAD time the voltage depends on the direction of the current. If the current is leaving the pin, the voltage is a diode drop below ground. If the current is entering the pin, the voltage is a diode drop above VM. The diode drop is associated with the body diode of the high-side or the low-side FET. The dead time is dependent on the slew-rate setting because a portion of the FET gate ramp includes the observable dead time.
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