ZHCSFZ1A January   2017  – July 2018 DRV8886

UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
    1.     简化原理图
  4. 修订历史记录
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Indexer Timing Requirements
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Stepper Motor Driver Current Ratings
        1. 7.3.1.1 Peak Current Rating
        2. 7.3.1.2 rms Current Rating
        3. 7.3.1.3 Full-Scale Current Rating
      2. 7.3.2  PWM Motor Drivers
      3. 7.3.3  Microstepping Indexer
      4. 7.3.4  Current Regulation
      5. 7.3.5  Controlling RREF With an MCU DAC
      6. 7.3.6  Decay Modes
        1. 7.3.6.1 Mode 1: Slow Decay for Increasing Current, Mixed Decay for Decreasing Current
        2. 7.3.6.2 Mode 2: Mixed Decay for Increasing and Decreasing Current
        3. 7.3.6.3 Mode 3: Slow Decay for Increasing and Decreasing Current
      7. 7.3.7  Blanking Time
      8. 7.3.8  Charge Pump
      9. 7.3.9  Linear Voltage Regulators
      10. 7.3.10 Logic and Multi-Level Pin Diagrams
      11. 7.3.11 Protection Circuits
        1. 7.3.11.1 VM Undervoltage Lockout (UVLO)
        2. 7.3.11.2 VCP Undervoltage Lockout (CPUV)
        3. 7.3.11.3 Overcurrent Protection (OCP)
        4. 7.3.11.4 Thermal Shutdown (TSD)
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Stepper Motor Speed
        2. 8.2.2.2 Current Regulation
        3. 8.2.2.3 Decay Modes
      3. 8.2.3 Application Curves
  9. Power Supply Recommendations
    1. 9.1 Bulk Capacitance
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档
    2. 11.2 接收文档更新通知
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 术语表
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Layout Guidelines

The VM pin should be bypassed to GND using a low-ESR ceramic bypass capacitor with a recommended value of 0.01 µF rated for VM. This capacitor should be placed as close to the VM pin as possible with a thick trace or ground plane connection to the device GND pin.

The VM pin must be bypassed to ground using a bulk capacitor rated for VM. This component can be an electrolytic capacitor.

A low-ESR ceramic capacitor must be placed between the CPL and CPH pins. A value of 0.022 µF rated for VM is recommended. Place this component as close to the pins as possible.

A low-ESR ceramic capacitor must be placed between the VM and VCP pins. A value of 0.22 µF rated for 16 V is recommended. Place this component as close to the pins as possible.

Bypass the AVDD and DVDD pins to ground with a low-ESR ceramic capacitor rated 6.3 V. Place this bypass capacitor as close to the pin as possible.