ZHCSJB5B September 2019 – December 2019 DRV8904-Q1 , DRV8906-Q1 , DRV8908-Q1 , DRV8910-Q1 , DRV8912-Q1
UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.
Bypass the VM pin to the GND pin using a low-ESR ceramic bypass capacitor with a recommended value of 0.1 μF. Place this capacitor as close to the VM pin as possible with a thick trace or ground plane connected to the PGND pin. Additionally, bypass the VM pin using a bulk capacitor rated for VM. This component can be electrolytic. This capacitance must be at least 10 μF.
Bypass the VDD pin to the GND pin with a 0.1-μF low-ESR ceramic capacitor rated for 6.3 V (X5R or X7R). Place this capacitor as close to the pin as possible and minimize the path from the capacitor to the AGND pin.