ZHCSN27 december   2020 DS160PR810

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
    1.     Pin Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 DC Electrical Characteristics
    6. 6.6 High Speed Electrical Characteristics
    7. 6.7 SMBUS/I2C Timing Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Linear Equalization
      2. 7.3.2 Flat Gain
      3. 7.3.3 Receiver Detect State Machine
    4. 7.4 Device Functional Modes
      1. 7.4.1 Active PCIe Mode
      2. 7.4.2 Active Buffer Mode
      3. 7.4.3 Standby Mode
    5. 7.5 Programming
      1. 7.5.1 Control and Configuration Interface
        1. 7.5.1.1 Pin Mode
          1. 7.5.1.1.1 Four-Level Control Inputs
        2. 7.5.1.2 SMBUS/I2C Register Control Interface
        3. 7.5.1.3 SMBus/I 2 C Master Mode Configuration (EEPROM Self Load)
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 PCIe x16 Lane Configuration
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Community Resources
    3. 11.3 Trademarks
  13. 12Mechanical, Packaging, and Orderable Information

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订购信息

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCCABSMAX Supply voltage (VCC) –0.5 4.0 V
VIOCMOS,ABSMAX 3.3 V LVCMOS and open drain I/O voltage –0.5 4.0 V
VIO4LVL,ABSMAX 4-level input I/O voltage –0.5 2.75 V
VIOHS-RX,ABSMAX High-speed I/O voltage (RXnP, RXnN) –0.5 3.2 V
VIOHS-TX,ABSMAX High-speed I/O voltage (TXnP, TXnN) –0.5 2.75 V
TJ,ABSMAX Junction temperature 150 °C
Tstg Storage temperature range –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
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