ZHCSKE8D March   2016  – October 2019 DS250DF410

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化原理图
  4. 4 修订历史记录
  5. 5 说明 （续）
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics
    6. 7.6  Timing Requirements, Retimer Jitter Specifications
    7. 7.7  Timing Requirements, Retimer Specifications
    8. 7.8  Timing Requirements, Recommended Calibration Clock Specifications
    9. 7.9  Recommended SMBus Switching Characteristics (Slave Mode)
    10. 7.10 Recommended SMBus Switching Characteristics (Master Mode)
    11. 7.11 Recommended JTAG Switching Characteristics
    12. 7.12 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Device Data Path Operation
      2. 8.3.2  Signal Detect
      3. 8.3.3  Continuous Time Linear Equalizer (CTLE)
      4. 8.3.4  Variable Gain Amplifier (VGA)
      5. 8.3.5  Cross-Point Switch
      6. 8.3.6  Decision Feedback Equalizer (DFE)
      7. 8.3.7  Clock and Data Recovery (CDR)
      8. 8.3.8  Calibration Clock
      9. 8.3.9  Differential Driver with FIR Filter
        1. 8.3.9.1 Setting the Output VOD, Pre-Cursor, and Post-Cursor Equalization
        2. 8.3.9.2 Output Driver Polarity Inversion
      10. 8.3.10 Debug Features
        1. 8.3.10.1 Pattern Generator
        2. 8.3.10.2 Pattern Checker
        3. 8.3.10.3 Eye Opening Monitor
      11. 8.3.11 Interrupt Signals
      12. 8.3.12 JTAG Boundary Scan
    4. 8.4 Device Functional Modes
      1. 8.4.1 Supported Data Rates
      2. 8.4.2 SMBus Master Mode
      3. 8.4.3 Device SMBus Address
    5. 8.5 Programming
      1. 8.5.1 Bit Fields in the Register Set
      2. 8.5.2 Writing to and Reading from the Global/Shared/Channel Registers
    6. 8.6 Register Maps
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Front-Port Jitter Cleaning Applications
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Active Cable Applications
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curves
      3. 9.2.3 Backplane and Mid-plane Applications
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detailed Design Procedure
        3. 9.2.3.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 文档支持
      1. 12.1.1 开发支持
    2. 12.2 文档支持
      1. 12.2.1 相关文档
    3. 12.3 接收文档更新通知
    4. 12.4 支持资源
    5. 12.5 商标
    6. 12.6 静电放电警告
    7. 12.7 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

8.4.2 SMBus Master Mode

SMBus master mode allows the DS250DF410 to program itself by reading directly from an external EEPROM. When using the SMBus master mode, the DS250DF410 will read directly from specific location in the external EEPROM. When designing a system for using the external EEPROM, the user needs to follow these specific guidelines:

  • Maximum EEPROM size is 2048 Bytes
  • Minimum EEPROM size for a single DS250DF410 with individual channel configuration is 305 Bytes (3 base header bytes + 12 address map bytes + 4 × 72 channel register bytes + 2 share register bytes; bytes are defined to be 8-bits)
  • Set ENSMB = Float, for SMBus master mode
  • The external EEPROM device address byte must be 0xA0
  • The external EEPROM device must support 400kHz operation at 2.5-V or 3.3-V supply
  • Set the SMBus address of the DS250DF410 by configuring the ADDR0 and ADDR1 pins

When loading multiple DS250DF410 devices from the same EEPROM, use these guidelines to configure the devices:

  • Configure the SMBus addresses for each DS250DF410 to be sequential. The first device in the sequence must have an address of 0x30
  • Daisy chain READ_EN_N and ALL_DONE_N from one device to the next device in the sequence so that they do not compete for the EEPROM at the same time.
  • If all of the DS250DF410 devices share the same EEPROM channel and share register settings, configure the common channel bit in the base header to 1. With common channel configuration enabled, each DS250DF410 device will configure all 4 channels with the same settings.

When loading a single DS250DF410 from an EEPROM, use these guidelines to configure the device:

  • Set the common channel bit to 0 to allow for individual channel configuration, or set the common channel bit to 1 to load the same configuration settings to all channels.
  • When configuring individual channels, a 512, 1024 or 2048 Byte EEPROM must be used.
  • If there are more than three DS250DF410 devices on a PCB that require individual channel configuration, then each device must have its own EEPROM.
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