ZHCSOU1 February 2023 DS90UB638-Q1
PRODUCTION DATA
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
Supply voltage | VDD18 (VDD18_CSI, VDD18_P1 , VDD18_P0 , VDD18_FPD0, VDD18_FPD1) | –0.3 | 2.16 | V | |
VDD11 (VDD11_CSI, VDD11_D , VDD11_FPD0, VDD11_FPD1) | –0.3 | 1.32 and < V(VDD18) |
V | ||
VDDIO | –0.3 | 3.96 | V | ||
FPD-Link III input voltage | RIN0+, RIN0–, | Device powered up (VDD18, VDD11 and VDDIO within recommended operating conditions) | –0.3 | 2.75 | V |
Device powered down (VDD18, VDD11 and VDDIO below recommended operating conditions) Transient Voltage | –0.3 | 1.45 | V | ||
Device powered down (VDD18, VDD11 and VDDIO below recommended operating conditions) DC Voltage | –0.3 | 1.35 | V | ||
LVCMOS IO voltage | GPIO0, GPIO1, GPIO2, GPIOI4, GPIO5, GPIO6, XIN/REFCLK, VDD_SEL, XOUT, BISTEN, LOCK, PASS, CSI_D3P/N, CSI_D2P/N, CSI_D1P/N, CSI_D0P/N, CSI_CLK1P/N, CSI_CLK0P/N | –0.3 | V(VDDIO)+ 0.3 | V | |
PDB | –0.3 | 3.96 | V | ||
Configuration input voltage | MODE, IDX | –0.3 | V(VDD18)+ 0.3 | V | |
Open-drain voltage | GPIO3/INTB, I2C_SDA, I2C_SCL | –0.3 | 3.96 | V | |
Junction temperature | 150 | °C | |||
Storage temperature, Tstg | –65 | 150 | °C |