4 Revision History
Changes from B Revision (April 2013) to C Revision
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Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section Go
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Updated thermal characteristic values based on latest simulation data Go
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Changed deserializer LVCMOS DC and supply current specification test conditions based on latest production tests Go
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Changed IOL test condition for VOL at VDDIO = 3.3 V to 3 mA Go
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Changed max value of Deserializer VOL to 0.45 V Go
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Changed test condition parameter for VOL Serial Control Characteristic Go
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Changed RPU = 10 kΩ condition for the Serial Control Bus Characteristics of tR and tF Go
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Added notes for serializer and deserializer switching characteristics verified by characterizationGo
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Added corresponding pins for deserializer tCLH and tCHL parameterGo
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Added test condition to tDD deserializer parameter Go
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Changed corrected units for deserializer lock time and delay parameter Go
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Added serial stream and video control signal filter waveform to Feature Description Go
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Changed "NA" and "Disable" term in Table 5 and Table 6 to "Off" Go
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Changed output states to correct values based on OSS_SEL and PDB configuration in Table 7 Go
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Added details for Deserializer Map Select strap pin configuration Go
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Added clarification on the state of deserializer outputs during BIST mode operationGo
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Added statement to set input to low when entering BIST mode with DS90C241 or DS90UR241 Go
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Added note that ID[X] cannot be tied to VSS, as only four device addresses are supported Go
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Added RID tolerance and tablenote that RID ≠ 0 Ω to set ID[X] Go
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Changed statement that CONFIG settings can also by programmed via register Go
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Changed bit description to swap definition for Serializer RFB and VODGo
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Changed bit definition for Deserializer OSS_SEL Go
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Changed definition from Reserved to MAP_SEL for Deserializer Reg 0x02[5:4] Go
Changes from A Revision (April 2013) to B Revision
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Changed layout of National Semiconductor Data Sheet to TI formatGo