The ESD1LIN24 has a V_RWM of ±24 V to prevent the diode from being damaged during a short event. The bidirectional characteristic ensures both positive and negative polarity are protected. The low capacitance of 2.3 pF permits data rates up to 1 Gbps, which allows the designer to meet the requirements for LIN. The 1 kΩ and V_SUP diode allows the LIN signal to be pulled up to a diode drop below the battery voltage.