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ZHCSUT7A February 2024 – March 2024 ESD2CAN36-Q1 , ESD2CANFD36-Q1

PRODUCTION DATA

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请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)

DBZ|3

散热焊盘机械数据 (封装 | 引脚)

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5.7 Electrical Characteristics

over T_A = 25°C (unless otherwise noted)⁽¹⁾

PARAMETER		TEST CONDITIONS	DEVICE	MIN	TYP	MAX	UNIT
V_RWM	Reverse stand-off voltage			–36		36	V
V_BRF	Breakdown voltage⁽²⁾	I_IO = 10mA, IO to GND		37.8	40	44.2	V
V_BRR	Breakdown voltage⁽²⁾	I_IO = –10mA, IO to GND		–37.8	-40	–44.2	V
V_CLAMP	Clamping voltage⁽³⁾	I_PP = 1A, t_p = 8/20µs, IO to GND	ESD2CAN36-Q1		43		V
V_CLAMP		I_PP = 4.3A, t_p = 8/20µs, IO to GND	ESD2CAN36-Q1		61		V
V_CLAMP		I_PP = 1A, t_p = 8/20µs, IO to GND	ESD2CANFD36-Q1		47		V
V_CLAMP		I_PP = 3.1A, t_p = 8/20µs, IO to GND	ESD2CANFD36-Q1		61		V
V_CLAMP	Clamping voltage⁽⁴⁾	I_PP = 16 A, TLP, IO to GND or GND to IO	ESD2CAN36-Q1		63		V
V_CLAMP	Clamping voltage⁽⁴⁾	I_PP = 16 A, TLP, IO to GND or GND to IO	ESD2CANFD36-Q1		64		V
I_LEAK	Leakage current	V_IO = ±24 V, IO to GND		-50	5	50	nA
R_DYN	Dynamic resistance⁽⁴⁾	IO to GND and GND to IO	ESD2CAN36-Q1		0.49		Ω
R_DYN	Dynamic resistance⁽⁴⁾	IO to GND and GND to IO	ESD2CANFD36-Q1		0.49		Ω
C_L	Line capacitance⁽⁵⁾	V_IO = 0 V, f = 1MHz, V_pp = 30mV	ESD2CAN36-Q1		2.8	3.5	pF
C_L	Line capacitance⁽⁵⁾	V_IO = 0 V, f = 1MHz, V_pp = 30mV	ESD2CANFD36-Q1		2.6	2.9	pF

(1) Measurements made on each IO channel

(2) V_BRF and V_BRR are defined as the voltage when ±10mA is applied in the positive and negative going direction respectively, before the device latches into the snapback state

(3) Device stressed with 8/20μs exponential decay waveform according to IEC 61000-4-5

(4) Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008

(5) Measured from IO to GND on each channel